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RJ80536GE0412M - M Processor on 90ns Process

RJ80536GE0412M_587926.PDF Datasheet


 Full text search : M Processor on 90ns Process
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RJ80536GE0412M M Processor on 90ns Process
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SONY[Sony Corporation]
AM29LV010B-90EF AM29LV010B-70JF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:10Mbit; Package/Case:32-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes 128K X 8 FLASH 3V PROM, 90 ns, PDSO32
Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:10Mbit; Package/Case:32-PLCC; Peak Reflow Compatible (260 C):No; Supply Voltage Max:3V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes 128K X 8 FLASH 3V PROM, 70 ns, PQCC32
Spansion, Inc.
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Microsemi Corporation
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Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL
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Samsung Semiconductor Co., Ltd.
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ROHM
AT27LV040A07 AT27LV040A-90JI AT27LV040A-90JU AT27L 4-Megabit (512K x 8) Low Voltage OTP EPROM
90NS, PLCC, IND TEMP, GREEN(EPROM) 512K X 8 OTPROM, 90 ns, PQCC32
ATMEL Corporation
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意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
 
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