| PART |
Description |
Maker |
| S29CD016G0JFAA002 S29CD016G0JFAA012 S29CD016G0JFAA |
32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
|
SPANSION[SPANSION]
|
| S29CD016G0JQFA212 S29CD032G0MFAA102 S29CD016G0MQAI |
32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
|
SPANSION
|
| AM27C2048 AM27C2048-120DC AM27C2048-120DC5 AM27C20 |
2 Megabit (128 K x 16-Bit) CMOS EPROM
128K X 16 OTPROM, 120 ns, PQCC44
2 Megabit (128 K x 16-Bit) CMOS EPROM 2兆位28亩16位）的CMOS存储
2 Megabit (128 K x 16-Bit) CMOS EPROM 2兆位28亩16位）CMOS存储
TESTER FLAT CABLE 2兆位28亩16位）的CMOS存储
2 Megabit (128 K x 16-Bit) CMOS EPROM 128K X 16 UVPROM, 55 ns, CDIP40
4-Bit Binary Full Adders With Fast Carry 16-SO 0 to 70 2兆位128亩16位）的CMOS存储
TESTER MODULAR CABLE RJ45/12/11
4-Bit Binary Full Adders With Fast Carry 16-SOIC 0 to 70
Evaluation Kit for the MAX3869
2 megabit CMOS EPROM
|
SPANSION LLC
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
|
| AM49DL322BGT85T AM49DL322BGT85S AM49DL323BGB70T AM |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous 堆叠式多芯片封装MCP）闪存和SRAM32兆位M × 8 2米x 16位）3.0伏的CMOS只，同时
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2M x 16-Bit) SPECIALTY MEMORY CIRCUIT, PBGA73
|
Spansion Inc.
Advanced Micro Devices, Inc.
|
| AM29LL800BB-150EC AM29LL800BB-150FIB AM29LL800BB-1 |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 2.2 Volt-only Boot Sector Flash Memory 1M X 8 FLASH 2.2V PROM, 200 ns, PDSO44
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 2.2 Volt-only Boot Sector Flash Memory 1M X 8 FLASH 2.2V PROM, 200 ns, PDSO48
Quadruple Bus Buffer Gates With 3-State Outputs 14-SSOP -40 to 85 1M X 8 FLASH 2.2V PROM, 150 ns, PDSO44
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 2.2 Volt-only Boot Sector Flash Memory 8兆位1 M中的x 8-Bit/512亩x 16位）.2伏的CMOS只引导扇区闪
|
Advanced Micro Devices, Inc.
|
| AM29LV256MH113R AM29LV256MH123R AM29LV256MH123RPGI |
256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
CAP, FILM, 0.22UF, 100V, PPS, 2825,5%,SM
256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control 16M X 16 FLASH 3V PROM, 120 ns, PDSO56
256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control 256兆位6 M中的x 16-Bit/32 M中的x 8位）MirrorBitTM 3.0伏特，只有统一闪存部门与VersatileI /价外控制
|
Advanced Micro Devices, Inc.
|
| AM29F400AB AM29F400AB-120EC AM29F400AB-120ECB AM29 |
4 Megabit (524288 x 8-Bit/262144 x 16-Bit) CMOS 5.0 Volt-only Sector Erase Flash Memory
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
|
AMD[Advanced Micro Devices]
|
| L640MH01PI L640MH01NI L640MH12NI L640MH11NI L640MH |
64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OControl 4M X 16 FLASH 3V PROM, 100 ns, PDSO56
64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit??3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O??Control
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| AM41DL1634DB30IT AM41DL1634DB45IS AM41DL1634DB70IS |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices]
|
| AM45DL6408G |
64 Mbit (8 M x 8-Bit/4 M x 16-Bit) CMOS and 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) (Preliminary)
From old datasheet system
|
AMD Inc
|
| AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
