PART |
Description |
Maker |
HY27US08281A HY27US08282A HY27US16281A HY27US16282 |
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory
|
Hynix Semiconductor
|
K4S280432A-TC_L75 K4S280432A-TC_L80 K4S280432A-TC/ |
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM米4位4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
|
K4S280432D-TC/L1H K4S280432D-TC/L1L K4S280432D-TC/ |
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM米4位4银行同步DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K4D261638F-TC33 K4D261638F-TC25 K4D261638F-TC40 K4 |
128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存 8M X 16 DDR DRAM, 0.55 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 8M X 16 DDR DRAM, 0.55 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd. DiCon Fiberoptics, Inc.
|
K4R271669D-TCS8 K4R271669D K4R271669D-T |
128Mbit RDRAM(D-die)
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4R271669E |
128Mbit RDRAM(E-die)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K4D28163HD K4D28163HD-TC36 K4D28163HD-TC40 K4D2816 |
128Mbit DDR SDRAM 128Mbit DDR SDRAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
M36L0T7050B0 M36L0T7050T0 |
(M36L0T7050T0 / M36L0T7050B0) 128Mbit Flash Memory 32Mbit PSRAM
|
STMicroelectronics
|
H55S1262EFP-60E H55S1262EFP-60M H55S1262EFP-75E H5 |
128MBit MOBILE SDR SDRAMs based on 2M x 4Bank x16 I/O
|
Hynix Semiconductor
|
KM48S16030BT-G_FA KM48S16030BT-G_FH KM48S16030BT-G |
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung semiconductor
|
V55C2128164VT V55C2128164VB |
128Mbit LOW-POWER SDRAM 2.5 VOLT, TSOP II / BGA PACKAGE 8M X 16
|
Mosel Vitelic, Corp.
|