| PART |
Description |
Maker |
| 2SJ211 2SJ211-T2B 2SJ211-L 2SJ211-T1B |
P-CHANNEL MOS FET FOR SWITCHING
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0621-7 00; No. of Positions: 8; Connector Type: Panel
|
NEC[NEC]
NEC Corp.
|
| 30CTH02 30CTH02-1 30CTH02FP 30CTH02S |
200V 20A HyperFast Discrete Diode in a TO-220AB package
300V 20A HyperFast Discrete Diode in a TO-262 package
300V 20A HyperFast Discrete Diode in a TO-220 FullPak package
200V 30A HyperFast Discrete Diode in a D2-Pak package
|
International Rectifier
|
| HGT1S7N60A4DS9A |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0692-5 53; Contact Mating Area Plating: Gold 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|4A一（c）|63AB
|
Intersil, Corp.
|
| HGT2100-100 HGT2100-1000 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0684-7 53; Contact Mating Area Plating: Gold 工业控制IC
Industrial Control IC 工业控制IC
|
IDEC, Corp.
|
| 2SJ327 2SJ327-Z 2SJ327-Z-T1 2SJ327-Z-E2 2SJ327-Z-T |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0620-4 00; No. of Positions: 6; Connector Type: Panel
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
P-channel enhancement type
|
NEC Corp.
NEC[NEC]
|
| IRGS14C40L IRGB14C40L IRGSL14C40L |
430V Low-Vceon Discrete IGBT in a TO-262 package
430V Low-Vceon Discrete IGBT in a D2-Pak package
430V Low-Vceon Discrete IGBT in a TO-220AB package
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| 6833 7100 7101 3102 7102 |
T- Subminiature Lamps
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 541-0262-3 06; Connector Type: Wire; Contact Gender
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 541-0222-9 00; Connector Type: Wire; Contact Gender
|
International Light Technologies Inc.
|
| MJE5850 MJE5850-D MJE5851 |
Power 8A 300V Discrete PNP
SWITCHMODE Series PNP Silicon Power Transistors
Power 8A 350V Discrete PNP
|
ON Semiconductor
|
| MJD2955-001 MJD3055T4 |
Power 10A 60V Discrete PNP
Power 10A 60V Discrete NPN
|
ON Semiconductor
|
| 11DQ10TR 11DQ09 11DQ09TR 11DQ10 |
SCHOTTKY RECTIFIER 肖特基整流器
90V 1.1A Schottky Discrete Diode in a DO-204AL package
100V 1.1A Schottky Discrete Diode in a DO-204AL package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRG4BC40WS IRG4BC40WL |
600V Warp 60-150 kHz Discrete IGBT in a TO-262 package
600V Warp 60-150 kHz Discrete IGBT in a D2Pak package
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
