PART |
Description |
Maker |
APT65GP60B2 |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology http://
|
APT50GP60J |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT25GP90B |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT45GP120J |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT75GP120J |
MOSFET POWER MOS 7 IGBT
|
ADPOW[Advanced Power Technology]
|
APT32GU30B |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT15GP60BDF1 |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology Ltd.
|
APT83GU30B APT83GU30S |
POWER MOS 7 IGBT MOSFET
|
Advanced Power Technology
|
APT65GP60J |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology http://
|
IRFBL10N60A |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞???? HEXFET Power MOSFET HEXFET? Power MOSFET 11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
|
IRF[International Rectifier] VISHAY SILICONIX
|
APT46GA90JD40 |
High Speed PT IGBT Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation Microsemi, Corp.
|