| PART |
Description |
Maker |
| 2SD2583 |
AUDIO FREQUENCY AMPLIFIER, SWITCHING NOPN SILICON EPITAXIAL TRANSISTORS
From old datasheet system
TRANSISTOR,BJT,NPN,30V V(BR)CEO,5A I(C),TO-126
AUDIO FREQUENCY AMPLIFIER/ SWITCHING NOPN SILICON EPITAXIAL TRANSISTORS
|
http://
NEC[NEC]
|
| 2SC5847 |
Ultrahigh-Frequency Transistors
|
SANYO
|
| 2SC5781 |
Ultrahigh-Frequency Transistors
|
SANYO
|
| EC4H07C |
Ultrahigh-Frequency Transistors
|
SANYO
|
| UPB1005GS UPB1005GS-E1 UPB1003GS UPB1004GS UPC2753 |
REFERENCE FREQUENCY 16.368 MHz, 2ND IF FREQUENCY 4.092 MHz RF/IF FREQUENCY DOWN-CONVERTER PLL FREQUENCY SYNTHESIZER IC FOR GPS RECEIVER
|
NEC[NEC]
|
| MRF3866 |
HIGH-FREQUENCY TRANSISTORS NPN SILICON
|
Motorola, Inc
|
| 2N439A |
NPN HIGH FREQUENCY COMPUTER TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
|
| UMX21N |
High transition frequency (dual transistors)
|
Rohm
|
| MRF571 MRF5711LT1 MMBR571LT1 |
NPN Silicon High-Frequency Transistors
|
MOTOROLA[Motorola, Inc]
|
| 2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 |
EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION
EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp.
BOCA[Boca Semiconductor Corporation]
|
| HFA3135IHZ96 HFA3134 HFA3134_05 HFA3134IH96 HFA313 |
Ultra High Frequency Matched Pair Transistors
|
INTERSIL[Intersil Corporation]
|
