| PART |
Description |
Maker |
| M6MGB331S8AKT M6MGT331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| MSM27C852CZ MSC27C852CZ MSM27C8B52CZ |
524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
From old datasheet system
|
OKI electronic components
OKI electronic componets
OKI SEMICONDUCTOR CO., LTD.
|
| MR27V852DRA MR27V852DMA MR27V852DTP MR27V852D |
524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
| MR27V3252D |
2,097,152-Word x 16-Bit or 4,194,304-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI[OKI electronic componets]
|
| MSM27C452CZ |
262,144-Word x 16-Bit or 524,288-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI electronic components
OKI electronic componets
OKI SEMICONDUCTOR CO., LTD.
|
| TC53257 TC53257F TC53257P |
256K BIT (32K WORD x 8 BIT) CMOS MASK ROM SILICON GATE MOS
|
Toshiba Semiconductor
|
| UPD442000A-X UPD442000AGU-DD10X-9JH UPD442000AGU-D |
2M-bit(256K-word x 8-bit) Low Power SRAM
|
NEC
|
| UPD434016A |
4M-Bit CMOS Fast SRAM / 256K-word by 16-Bit
|
NEC Electronics
|
| UPD444016LLE-A10 UPD444016LLE-A12 UPD444016LLE-A8 |
4M-bit(256K-word x 16-bit) Fast SRAM
|
NEC
|
| UPD444016G5-8Y-7JF UPD444016G5-10Y-7JF UPD444016G5 |
4M-bit(256K-word x 16-bit) Fast SRAM
|
NEC
|
