| PART |
Description |
Maker |
| M27W512 M27W512-100B6TR M27W512-100F6TR M27W512-10 |
4 Mbit 256Kb x16 Low Voltage UV EPROM and OTP EPROM
Hex D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SOIC 0 to 70
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM 512千位64Kb的x8低压紫外线EPROM和检察官办公室存储器
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M28F512-12B1 M28F512-12C1 M28F512-10C1 28F256 M28F |
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory 512千位4Kb的x8整体擦除）Flasxh内存
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M27W512-100B6E M27W512-100F6 M27W512-100K6 M27W512 |
512 KBIT (64KB X8) LOW VOLTAGE OTP EPROM
Hex D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SOIC 0 to 70
Quadruple D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SOIC 0 to 70
512 Kbit (64K x8) Low Voltage UV EPROM and OTP EPROM 512千位4K的8）低压紫外线EPROM和检察官办公室存储器
Quadruple D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SO 0 to 70 512千位4K的8）低压紫外线EPROM和检察官办公室存储器
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M27C512 |
512 KBIT (64KB X8) UV EPROM AND OTP EPROM
|
ST Microelectronics
|
| M25P05-V M25P05VMN6T M25P05 |
NOT FOR NEW DESIGN - 512 KBIT, LOW VOLTAGE, SERIAL FLASH MEMORY WITH 20 MHZ SPI BUS INTERFACE
NOT FOR NEW DESIGN - 512 KBIT, LOW VOLTAGE, SERIAL FLASH MEMORY WITH 20 MHZ SPI BUS INTERFACE
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M25P05 7641 |
512 Kbit, Low Voltage, Serial Flash Memory With 20 MHz SPI Bus Interface
From old datasheet system
|
STMicroelectronics
|
| M24512-HR M24512-R M24256-BHR M24256-BR M24512-WDW |
64K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
512 Kbit and 256 Kbit serial I?C bus EEPROM with three Chip Enable lines
512 Kbit and 256 Kbit serial I虏C bus EEPROM with three Chip Enable lines
512 Kbit and 256 Kbit serial I2C bus EEPROM with three Chip Enable lines
|
STMicroelectronics
|
| M93C46-DS3G_S M93C46-DS3G_W M93C46-DS3P_S M93C46-D |
256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
512 X 16 MICROWIRE BUS SERIAL EEPROM, DSO8
1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIREserial access EEPROM
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE? serial access EEPROM
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE庐 serial access EEPROM
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE垄莽 serial access EEPROM
|
意法半导
STMicroelectronics
|
| M24C02-WMN6P M24C02-WBN6P M24C16-RBN6P M24C16-WMN6 |
Enhanced ESD/latch-up protection, More than 40-year data retention
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I2C bus EEPROM
|
STMicroelectronics
|
| UL1201 |
Wzmacniacz p.cz.
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM
|
Ultra CEMI
|
| ULA6102N UL1102N UL1101N UL1101 UL1102 ULA6102 |
2 Kbit serial I²C bus EEPROM for DIMM serial presence detect
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM
PARAMETRY DOPUSZCZALNE
Dwa wzmacniacze rnicowe
|
List of Unclassifed Manufacturers
ETC[ETC]
Ultra CEMI
|
| M24512-DR12 M24512-DF12 M24512-R12 M24512-DFMN6TP |
512 Kbit serial I2C bus EEPROM
512Kit Serial I2C bus EEPROM with three Chip Enable Lines
512-Kbit serial I2C bus EEPROM
|
ST Microelectronics
STMicroelectronics
|
