PART |
Description |
Maker |
K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 |
16M x 16 SDRAM, LVTTL, 133MHz 256Mb E-die SDRAM Specification 54pin sTSOP-II
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Samsung Electronic SAMSUNG[Samsung semiconductor]
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K4H561638F K4H561638F-TC_LB3 FMB857B K4H560838F-TC |
256Mb F-die DDR SDRAM Specification
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K4H560838E-NLB3 K4H560438E-NC K4H560438E-NC_LA2 K4 |
256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
|
SAMSUNG[Samsung semiconductor]
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K4H560838F K4H561638F-UCCC K4H561638F-UCC4 K4H5608 |
256Mb F-die DDR400 SDRAM Specification 256Mb的的F -模具支持DDR400内存规格
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4H560838E-ZLB3 K4H560438E-ZC K4H560438E-ZC_LA2 K4 |
256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
|
SAMSUNG[Samsung semiconductor]
|
K4T56083QF-GCD5 K4T56083QF-ZCD5 K4T56043QF-GCD5 K4 |
256Mb F-die DDR2 SDRAM OSC 3.3V SMT 7X5 CMOS 256Mb的的F - DDR2内存芯片
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SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
MR18R162GAF0 MR16R162GAF0 MR18R1624AF0 MR18R1622AF |
64M X 16 RAMBUS MODULE, DMA184 TVS 500W 6.5V BIDIRECT DO-15 6Mx16显示)2/8/16)件RIMM的模块,基于256Mb阿芯片,32秒银行,16K/32ms参考,.5V 16Mx16显示)2/8/16)件RIMM的模块,基于256Mb阿芯片,32秒银行,16K/32ms参考,.5V (MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die (MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
HYS64V32220GDL-8 HYS64V16200GDL HYS64V16200GDL-7 H |
144 pin SO-DIMM SDRAM Modules 144引脚SO - DIMM内存模块 144 pin SO-DIMM SDRAM Modules 144引脚的SO - DIMM内存模块 256MB PC100 (2-2-2) 2-bank End-of-Life SDRAM|16MX64|CMOS|DIMM|144PIN|PLASTIC SDRAM Modules - 128MB PC133 (3-3-3) 1-bank; End-of-Life SDRAM Modules - 256MB PC133 (3-3-3) 2-bank; End-of-Life SDRAM Modules - 128MB PC133 (2-2-2) 1-bank; End-of-Life SDRAM Modules - 256MB PC133 (2-2-2) 2-bank; End-of-Life 16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
K5D5657DCM-F015 K5D5657DCM-F0CL |
MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM MCP / 256Mb NAND and 256Mb Mobile SDRAM
|
SAMSUNG[Samsung semiconductor] Samsung Electronics
|
K5D5657ACM K5D5657ACM-F015 |
256Mb NAND and 256Mb Mobile SDRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
HYM72V32736BLT8-K HYM72V32736BT8-K HYM72V32736BT8- |
SDRAM|32MX72|CMOS|DIMM|168PIN|PLASTIC SDRAM - Unbuffered DIMM 256MB x64 SDRAM Module
|
Hynix Semiconductor
|
HYB25D256400BC-6 HYB25D256400BC-7 HYB25D256400BT-7 |
DDR SDRAM Components - 256Mb (64Mx4) FBGA DDR333 (2.5-3-3) DDR SDRAM Components - 256Mb (64Mx4) FBGA DDR266A (2-3-3) DDR SDRAM Components - 256Mbit (64Mx4) DDR266A (2-3-3) DDR SDRAM Components - 256Mb (16Mx16) FBGA DDR333 (2.5-3-3) DDR SDRAM Components - 256Mb (16Mx16) FBGA DDR266A (2-3-3) DDR SDRAM Components - 256Mbit (16Mx16) DDR333 (2.5-3-3) DDR SDRAM Components - 256Mbit (16Mx16) DDR266A (2-3-3) DDR SDRAM Components - 256Mb (32Mx8) FBGA DDR333 (2.5-3-3) DDR SDRAM Components - 256Mbit (32Mx8) DDR333 (2.5-3-3) DDR SDRAM Components - 256Mb (32Mx8) FBGA DDR266A (2-3-3) DDR SDRAM Components - 256Mb (62Mx4) DDR266 (2-2-2)
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Infineon
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