| PART |
Description |
Maker |
| K4S560432B-TC_L1H K4S560432B-TC_L1L K4S560432B-TC_ |
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM6x 4位4银行同步DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| V54C3256164VBUC V54C3256164VBUT V54C3256164VBLT7 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-PIN TSOPII 16M X 16
LOW POWER 256Mbit SDRAM 3.3 VOLT/ 54-BALL SOC BGA 54-PIN TSOPII 16M X 16
|
MOSEL-VITELIC
Mosel Vitelic, Corp.
Mosel Vitelic Corp
|
| K4S560832A K4S560832A-TC_L1H K4S560832A-TC_L1L K4S |
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
IC,SDRAM,4X8MX8,CMOS,TSOP,54PIN,PLASTIC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4E660411D-TC60 K4E640411D-JC50 K4E640411D-JC60 K4 |
16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
SAMSUNG[Samsung semiconductor]
|
| K4E640412E-TI45 K4E640412E-TI50 K4E640412E-TI60 K4 |
16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
SAMSUNG[Samsung semiconductor]
|
| K4J55323QF-GC K4J55323QF-GC14 K4J55323QF-GC15 K4J5 |
256Mbit GDDR3 SDRAM
|
Samsung semiconductor
|
| K4N56163QF-GC37 K4N56163QF K4N56163QF-GC K4N56163Q |
256Mbit gDDR2 SDRAM
|
SAMSUNG[Samsung semiconductor]
|
| IBM13M16734BCA |
16M x 72 1-Bank Registered SDRAM Module(16M x 72 1组寄存同步动态RAM模块)
|
IBM Microeletronics
|
| WEDPND16M72S-200BI WEDPND16M72S-200BM WEDPND16M72S |
200MHz; 2.5V power supply; 16M x 72 DDR SDRAM
250MHz; 2.5V power supply; 16M x 72 DDR SDRAM
266MHz; 2.5V power supply; 16M x 72 DDR SDRAM
|
White Electronic Designs
|
| K4S561632D K4S561632D-TC_L75 K4S561632D-TC_L1H K4S |
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M65KG256AB |
256Mbit (4 Banks x 4M x 16) 1.8V Supply, 133MHz Clock Rate, DDR Low Power SDRAM
|
STMicroelectronics
|
