| PART |
Description |
Maker |
| CM100TJ-24F |
128 x 64 pixel format, LED or EL Backlight available
Trench Gate Design Six IGBTMOD 100 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD⑩ 100 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD?/a> 100 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM75TJ-24F |
Trench Gate Design Six IGBTMOD?/a> 75 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD⑩ 75 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD 75 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD75 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM100TU-24F |
Trench Gate Design Six IGBTMOD100 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD 100 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD⑩ 100 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD?/a> 100 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM150TU-12F |
Trench Gate Design Six IGBTMOD?/a> 150 Amperes/600 Volts
Trench Gate Design Six IGBTMOD⑩ 150 Amperes/600 Volts
240 x 128 pixel format, CFL Backlight with power harness
|
POWEREX[Powerex Power Semiconductors]
|
| CM200DY-24NF |
Trench Gate Design Dual IGBTMOD
|
Powerex Power Semiconductors
|
| CM600HA-5F |
Trench Gate Design Single IGBTMOD600 Amperes/250 Volts
Trench Gate Design Single IGBTMOD 600 Amperes/250 Volts
Trench Gate Design Single IGBTMOD⑩ 600 Amperes/250 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM200DU-12F |
Trench Gate Design Dual IGBTMOD 200 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD⑩ 200 Amperes/600 Volts
|
Powerex Power Semiconductors
|
| FQB3N60 |
This N-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
|
Kersemi Electronic Co.,...
|
| HER306-T3 HER306-TB HER302-T3 HER302-TB HER308 HER |
3.0A HIGH EFFICIENCY RECTIFIER 3.0A的高效整
85000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
28000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
20000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
|
Won-Top Electronics Co., Ltd.
WTE[Won-Top Electronics]
|
| HER207 HER204 HER201 HER208G HER201G HER202 HER203 |
10000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
5000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN 24高效玻璃钝化二极
24 HIGH EFFICIENCY GPP DIODES
|
Leshan Radio Company, Ltd.
LRC[Leshan Radio Company]
|
| M57161L-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
HYBRID IC FOR DRIVING TRENCH-GATE IGBT
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| XC2S50E-6PQG208C XC2S300E-6PQG208I |
50,000 SYSTEM GATE 1.8V FPGA - NOT RECOMMENDED for NEW DESIGN FPGA, 384 CLBS, 23000 GATES, 357 MHz, PQFP208
300,000 SYSTEM GATE 1.8V FPGA - NOT RECOMMENDED for NEW DESIGN FPGA, 1536 CLBS, 93000 GATES, 357 MHz, PQFP208
|
Xilinx, Inc.
|
