| PART |
Description |
Maker |
| CM200TU-12H |
HIGH POWER SWITCHING USE INSULATED TYPE
240 x 128 pixel format, CFL Backlight with power harness
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| QM100TX1-H QM100 |
HIGH POWER SWITCHING USE INSULATED TYPE
240 x 128 pixel format, LED or EL Backlight
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| QM100 QM100TX1-HB |
HIGH POWER SWITCHING USE INSULATED TYPE
240 x 128 pixel format, STN Blue
CAP, CHIP, 1812, 16V, X7R, 10UF
大功率开关使用绝缘型
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| QM50TX-HB |
240 x 128 pixel format, LED or EL Backlight
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| APT5024SVR |
POWER MOS V 500V 22A 0.240 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT8024B2VR APT8024LVR |
POWER MOS V 800V 33A 0.240 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT5024BVR |
POWER MOS V 500V 22A 0.240 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| PTFB212503EL PTFB212503FL |
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110-2170 MHz
|
Infineon Technologies AG
|
| 2SA1759 A5800340 2SC4620 2SC4505 2SA1759T100P |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
From old datasheet system
High-Voltage Switching Transistor (Camera strobes and Telephone, Power supply) (-400V, -0.1A)
High-Coltage Switching Transistor
|
ROHM
|
| CS51033GDR8G CS51033GD8G |
Fast P−Ch FET Buck Controller 1 A SWITCHING CONTROLLER, 240 kHz SWITCHING FREQ-MAX, PDSO8
|
Rectron Semiconductor
|
