| PART |
Description |
Maker |
| APT2X30D60J APT2X31D60J |
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 600V 30A
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
|
| APT2X61D20J APT2X60D20J |
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 200V 60A
|
Advanced Power Technology
|
| STE139N65M5 |
N-channel 650 V, 0.014 Ohm typ., 130 A, MDmesh(TM) V Power MOSFET in ISOTOP package
|
ST Microelectronics
|
| STE140NF20D |
N-channel 200 V, 10 mOmh typ., 140 A STripFET II Power MOSFET (with fast diode) in an ISOTOP package
|
STMicroelectronics
|
| STE40NK90ZD |
N-CHANNEL 900V - 0.14 - 40 A ISOTOP Super FREDMeshTM MOSFET
N-CHANNEL 900V - 0.14 OHM - 40A ISOTOP SUPERFREDMESH MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| BZT52C4V7T |
Planar Die Construction Ultra-Small Surface Mount Package
|
TY Semiconductor Co., Ltd
|
| APT150GN60JDQ4 |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 600; VCE(sat) (V): 1.4; IC (A): 123; 220 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
Advanced Power Technology
|
| APT46GA90JD40 |
High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
| STE26NA90 6245 -STE26NA90 |
N-Channel 900V-0.25惟-26A-ISOTOP Fast Power MOSFET(N娌??蹇?????MOSFET)
From old datasheet system
N - CHANNEL 900V - 0.25ohm- 26A - ISOTOP FAST POWER MOSFET
N - CHANNEL 900V - 0.25 Ohm - 26A - ISOTOP FAST POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
