| PART |
Description |
Maker |
| SUB85N04-03-E3 |
85 A, 40 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
VISHAY SILICONIX
|
| SUM110N04-04-E3 |
110 A, 40 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
VISHAY SILICONIX
|
| CHA-20NF |
(CHA-20xx) Coaxial Attenuators
|
Component General
|
| IXTF280N055T |
TrenchMVTM Power MOSFET
150 A, 55 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS Corporation
|
| RJK0348DPA10 RJK0348DPA-00-J0 |
Silicon N Channel Power MOS FET Power Switching
50 A, 30 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK(2), 8 PIN
|
Renesas Electronics Corporation
|
| RMG04GT121 RMG06GT121 RMG12GT121 |
RESISTOR, 0.0625 W, 2 %, 100 ppm, 120 ohm, SURFACE MOUNT, 0402 CHIP, LEAD FREE
RESISTOR, 0.1 W, 2 %, 100 ppm, 120 ohm, SURFACE MOUNT, 0603 CHIP, LEAD FREE
RESISTOR, 0.25 W, 2 %, 100 ppm, 120 ohm, SURFACE MOUNT, 1206 CHIP, LEAD FREE
|
TA-I Technology Co., Ltd
|
| DLP31SN121ML2L |
CHOKE COMMON MODE 120 OHM 1206
|
MURATA MANUFACTURING CO LTD
|
| STP180N10F3 |
120 A, 100 V, 0.0048 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
STMICROELECTRONICS
|
| SQM120N10-09-GE3 |
120 A, 100 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
VISHAY SILICONIX
|
| PRM1/2-100-JT |
RESISTOR, WIRE WOUND, 0.5 W, 5 %, 120 ppm, 10 ohm, SURFACE MOUNT CHIP
|
RCD Components, Inc.
|
| 24AA01T-E_STG 24AA01-E/MSG 24LC01-E/MSG 24AA01-E/O |
1K I2C Serial EEPROM 一千的I2C串行EEPROM
RES NET BUSSED 120 OHM 10-SIP
|
Microchip Technology, Inc.
Microchip Technology Inc.
|
|
