| PART |
Description |
Maker |
| 0263.375TX832 026301.5TX832 263.125 0263.125TX832 |
FUSE 375MA VERY FAST
Low-Input-Voltage, 300mA LDO Regulators with RESET in SOT and TDFN
FUSE 125MA VERY FAST
FUSE 750MA VERY FAST
FUSE 500MA VERY FAST
FUSE 250MA VERY FAST
FUSE 62MA VERY FAST
FUSE 3.5A VERY FAST
FUSE 5.0A VERY FAST
FUSE 3.0A VERY FAST
FUSE 2.0A VERY FAST
FUSE 1.0A VERY FAST
FUSE 4.0A VERY FAST
FUSE 2.5A VERY FAST 特快速保险丝.5a
FUSE 1.5A VERY FAST 保险.5A非常快
|
Littelfuse, Inc.
KEMET Corporation
|
| MB85391A-60 MB85391A-70 |
CMOS 4M×32Bit Fast Page Mode DRAM Module S(CMOS 4M×32快速页面存取模式动态RAM)
|
Fujitsu Limited
|
| MB814100A-80 MB814100A-60 MB814100A-70 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4M ×1 位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
| MB81V17800A-60L |
CMOS 2 M ×8 BIT Fast Page Mode DRAM(CMOS 2 M ×8 位快速页面存取模式动态RAM) 的CMOS 2米8位快速页面模式的DRAM的CMOS2米8位快速页面存取模式动态内存）
|
Fujitsu, Ltd.
|
| IDT74FCT162H272CTPA IDT74FCT162H272CTPAB IDT74FCT1 |
FAST CMOS 12-BIT SYNCHRONOUS BUS EXCHANGER FCT SERIES, 12-BIT EXCHANGER, TRUE OUTPUT, CDFP56
FAST CMOS 12-BIT SYNCHRONOUS BUS EXCHANGER FCT SERIES, 12-BIT EXCHANGER, TRUE OUTPUT, PDSO56
FAST CMOS 12-BIT SYNCHRONOUS BUS EXCHANGER 快速CMOS 12位同步总线交换
CAP 47UF 6V 10% TANT SMD-7343-31 TR-7-PL SN100% LOWESR-220
CAP 4.7UF 35V 20% TANT SMD-7343-31 TR-7-PL SN/PB5% LOWESR-700
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| K4F16708112D K4F160811D-B K4F160812D K4F160812D-B |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
|
Samsung Electronic
|
| KM48C2100B KM48V2100B KM48C2000B KM48V2000B KM48C2 |
2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 70ns
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns
2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns
2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IDT54FCT2374ATQ IDT54FCT2374ATQB IDT74FCT2374ATQ I |
Fast CMOS octal D register (3-state)
CAP 0.039UF 100V 10% X7R SMD-1206 TR-7-PL SN-NIBAR 快速CMOS八路D寄存器（3态）
FAST CMOS OCTAL D REGISTERS (3-STATE) 快速CMOS八路D寄存器（3态）
CAP 1UF 16V 5% Y5V SMD-0805 TR-7-PL SN-NIBAR FCT SERIES, 8-BIT DRIVER, TRUE OUTPUT, PDSO20
CAP 0.47UF 200V 20% X7R SMD-2225 TR-7-PL SN-NIBAR
|
INTEGRATED DEVICE TECHNOLOGY INC
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| K4F160411D K4F160412D K4F170411D K4F170412D K4F160 |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| ADCMP600NBSP ADCMP600 ADCMP600BRJ-RL |
COMPARATOR, 5000 uV OFFSET-MAX, 3 ns RESPONSE TIME, PDSO5
From old datasheet system
ADCMP600 - Rail-to-Rail, Very Fast, 2.5 V to 5.5 V, Single-Supply TTL/CMOS Comparator in 5-lead SC70
Rail-to-Rail, Very Fast, 2.5 V to 5.5 V, Single-Supply TTL/CMOS Comparator in 5-lead SC70 and SOT-23
|
ANALOG DEVICES INC
|
| GLT41116-30J4 GLT41116-45J4 |
30ns; 64K x 16 CMOS dynamic RAM with fast page mode
45ns; 64K x 16 CMOS dynamic RAM with fast page mode
|
G-LINK Technology
|
| KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000B |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
