| PART |
Description |
Maker |
| MB8264A MB8264A-15 MB8264A-10 MB8264A-12 |
MOS 65536-bit Dynamic Random Access Memory
|
Fujitsu Microelectronics
Fujitsu Media Devices Limited
Fujitsu Component Limited.
|
| HB561008AR-20 HB561008A-20 HB561008B-12 HB561008B- |
x8 Fast Page Mode DRAM Module
262114-word x 8 bit dynamic random access memory module
26214-word x 8-bit dynamic random access memory module
262锛?14-word x 8-bit dynamic random access memory module
|
Hitachi,Ltd.
|
| GM76C88AL-15 GM76C88AL-12 GM76C88AL GM76C88ALK-15 |
x8 SRAM
65,536 Bit static random access memory organized as 8,192 words by 8 bits using CMOS
65536 Bit RAM
|
etc
LG Semicon Co.,Ltd.
|
| AK548192D AK548192G AK548192S AK548192W AK548192Z |
262,144 X 8 Bit MOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CO...
ACCUTEK MICROCIRCUIT CORPOR...
http://
ACCUTEK MICROCIRCUIT CORPORATION
|
| MN4264 |
65536 Bit NMOS Dynamic RAM
|
Matsushita
|
| HM514800LJP-7 HM514800LJP-10 HM514800LZP-10 HM5148 |
70ns; V(cc): -1 to 7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
100ns; V(cc): -1 to 7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
|
Hitachi Semiconductor
|
| TC5565AFL-10 TC5565AFL-12 TC5565AFL-15 TC5565APL T |
65536 bit static random access memory organized as 8192 words by 8 bits using CMOS technology
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| HM5118160B HM5118160BJ-6 HM5118160BJ-7 HM5118160BJ |
1048576-word x 16-bit Dynamic Random Access Memory
|
Hitachi Semiconductor
|
| AK481024G AK481024S |
1,048,576 x 8 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
| AK5328192WP-60 |
8,388,608 by 32 Bit CMOS Dynamic Random Access Memory
|
http://
ACCUTEK MICROCIRCUIT CORPORATION
|
| AK5321024 |
2,097,152 Word by 32 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
