| PART |
Description |
Maker |
| IS61NVP51236 IS61NVP51236-200B3 IS61NVP51236-200B3 |
256K x 72, 512K x 36 and 1M x 18 18Mb, PIPELINE (NO WAIT) STATE BUS SRAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| GS8170DW36C-250 GS8170DW36C-250I GS8170DW36C-300 G |
250MHz 512K x 36 18MB double late write sigmaRAM SRAM
300MHz 512K x 36 18MB double late write sigmaRAM SRAM
333MHz 512K x 36 18MB double late write sigmaRAM SRAM
333MHz 256K x 72 18MB double late write sigmaRAM SRAM
|
GSI Technology
|
| IS61LF51218A-7.5B3 IS61LF51218A-7.5B2 IS61LF51218A |
256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM 256K X 36 CACHE SRAM, 7.5 ns, PQFP100
|
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
|
| IS61LPS51218A IS61LPS51218A12 IS64LPS25636A IS61LP |
256K x 36, 256K x 32, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
|
Integrated Silicon Solution, Inc
|
| IS61VPD25636A-200TQ2I IS61VPD51218A-200B2I |
256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM 256K X 36 CACHE SRAM, 3.1 ns, PQFP100
256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM 512K X 18 CACHE SRAM, 3.1 ns, PBGA119
|
Integrated Silicon Solution, Inc.
|
| GS8170LW36C-333 GS8170LW36C-250 GS8170LW36C-250I G |
333MHz 512K x 36 18MB double late write sigmaRAM SRAM
250MHz 512K x 36 18MB double late write sigmaRAM SRAM
300MHz 512K x 36 18MB double late write sigmaRAM SRAM
333MHz 256K x 72 18MB double late write sigmaRAM SRAM
250MHz 256K x 72 18MB double late write sigmaRAM SRAM
300MHz 1M x 18 18MB double late write sigmaRAM SRAM
|
GSI Technology
|
| IS61VPD51236A IS61VPD51236A-200B3 IS61VPD51236A-20 |
512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| CY7C1366B-200BGI CY7C1366B-200BGC CY7C1366B-225BGI |
Low Cost, 300 MHz Rail-to-Rail Amplifier (Single); Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 512K X 18 CACHE SRAM, 3.5 ns, PQFP100
CONNECTOR ACCESSORY 512K X 18 CACHE SRAM, 3 ns, PQFP100
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA119
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 256K X 36 CACHE SRAM, 2.8 ns, PBGA165
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 9 - MB的（256 × 36/512K × 18）流水线双氰胺同步静态存储器
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| IS61VPS25636A-200TQ2I IS61VPS25636A-250TQI |
256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 256K X 36 CACHE SRAM, 3.1 ns, PQFP100
256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 256K X 36 CACHE SRAM, 2.6 ns, PQFP100
|
Integrated Silicon Solution, Inc.
|
| GS8170LW36AC-300I GS8170LW72AC-300 GS8170LW36AC-33 |
512K X 36 STANDARD SRAM, 1.8 ns, PBGA209
18Mb ??x1Lp CMOS I/O Late Write SigmaRAM
18Mb x1Lp CMOS I/O Late Write SigmaRAM 256K X 72 STANDARD SRAM, 2.1 ns, PBGA209
18Mb x1Lp CMOS I/O Late Write SigmaRAM 512K X 36 STANDARD SRAM, 2.1 ns, PBGA209
18Mb Σ1x1Lp CMOS I/O Late Write SigmaRAM
|
GSI Technology, Inc.
|
| IS61VF51218A IS61LF25636A |
256K x 36-512K x 18 9Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
|
Integrated Silicon Solution
|
| MCM63Z918TQ7 MCM63Z918TQ7R MCM63Z918TQ8 MCM63Z918T |
256K x 36 and 512K x 18 Bit ZBT Fast Static RAM
|
Motorola, Inc
|
