| PART |
Description |
Maker |
| 24LC256TE/ST14 24LC256TE/SN 24AA256I/ST14 24AA256T |
Nonvolatile, 32-Position Digital Potentiometer
SERIAL EEPROM|32KX8|CMOS|TSSOP|14PIN|PLASTIC
Two/Four-Channel, I2C Adjustable Current DAC
SERIAL EEPROM|32KX8|CMOS|SOP|8PIN|PLASTIC
SERIAL EEPROM|32KX8|CMOS|DIP|8PIN|PLASTIC
Electronically Programmable Voltage Reference
SERIAL EEPROM|32KX8|CMOS|LLCC|8PIN|PLASTIC 串行EEPROM的| 32KX8 |的CMOS | LLCC | 8引脚|塑料
SERIAL EEPROM|32KX8|CMOS|TSSOP|8PIN|PLASTIC 串行EEPROM的| 32KX8 |的CMOS | TSSOP封装| 8引脚|塑料
|
Microchip Technology, Inc.
|
| EM033C08 EM033C08T EM033C08N |
Low Power 32Kx8 SRAM in a 32 pin ROM Pinout Compatible Package 低功2Kx8 SRAM的引脚兼容的32引脚封装光盘
|
Integrated Silicon Solution, Inc.
Integrated Silicon Solution Inc
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
|
| BS62LV1600ECG70 BS62LV1600ECG55 BS62LV1600FCP55 BS |
Very Low Power CMOS SRAM 2M X 8 bit 极低功耗CMOS SRAMx 8
Very Low Power CMOS SRAM 2M X 8 bit 2M X 8 STANDARD SRAM, 55 ns, PBGA48
Very Low Power CMOS SRAM 2M X 8 bit 2M X 8 STANDARD SRAM, 55 ns, PDSO44
|
BRILLIANCE SEMICONDUCTOR INC
BRILLIANCE SEMICONDUCTOR, Inc.
Brilliance Semiconducto...
|
| HY62VT08081E-DGC HY62VT08081E-DGE HY62VT08081E-DGI |
Low Power Slow SRAM - 256Kb
SWITCH, REED SPST-NO 10W SMD
QSW-REED,10MM,10W,SMD
9 POS FR-4 SIP SOCKET
x8|3V|70/85/100|Low Power Slow SRAM - 256K
x8|3.3V|70/85/100|Low Power Slow SRAM - 256K
32Kx8bit CMOS SRAM 32Kx8bit CMOS SRAM
x8 SRAM x8的SRAM
x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDSO28
x8 SRAM 32K X 8 STANDARD SRAM, 70 ns, PDSO28
x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDIP28
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
Analog Devices, Inc.
Panasonic Industrial Solutions
|
| K6X0808T1D K6X0808T1D-YQ85 K6X0808T1D-B K6X0808T1D |
32Kx8 bit Low Power CMOS Static RAM 32Kx8位低功耗CMOS静态RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM62256D KM62256DLG-5 KM62256DLG-5L KM62256DLG-7 K |
438100341
32Kx8 bit Low Power CMOS Static RAM 32Kx8位低功耗CMOS静态RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| GLT6100L08LL-100ST GLT6100L08LL-100TS GLT6100L08LL |
100ns; Ultra low power 128k x 8 CMOS SRAM
55ns; Ultra low power 128k x 8 CMOS SRAM
70ns; Ultra low power 128k x 8 CMOS SRAM
85ns; Ultra low power 128k x 8 CMOS SRAM
|
G-LINK Technology
|
| CY7C09179A-9AC CY7C09179A-7AC CY7C09079A-7AC CY7C0 |
SYNC SRAM|32KX9|CMOS|QFP|100PIN|PLASTIC 同步静态存储器| 32KX9 |的CMOS | QFP封装| 100引脚|塑料
SYNC SRAM|32KX8|CMOS|QFP|100PIN|PLASTIC 同步静态存储器| 32KX8 |的CMOS | QFP封装| 100引脚|塑料
|
Cypress Semiconductor Corp.
|
| K6E0808C1C K6E0808C1C-12 K6E0808C1C-15 K6E0808C1C- |
32K X 8 STANDARD SRAM, 12 ns, PDSO28
32Kx8 Bit High Speed CMOS Static RAM 32Kx8位高速CMOS静态RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| V62C1801024LL-85B V62C1801024LL-85T V62C1801024LL- |
LCD Displays 15.0 inch (38.0 cm) LVDS
Ultra Low Power 128K x 8 CMOS SRAM 128K的超低功耗8 CMOS SRAM
|
Mosel Vitelic Corp
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic, Corp.
|
| BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Asynchronous 4M(512Kx8) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
Brilliance Semiconducto...
|
| U634H256CSA35 |
NOVRAM|32KX8|CMOS|SOP|32PIN|PLASTIC NOVRAM | 32KX8 |的CMOS |专科| 32脚|塑料
|
Electronic Theatre Controls, Inc.
|
