| PART |
Description |
Maker |
| ISL55290IUZ-T13 |
Single and Dual Ultra-Low Noise, Ultra-Low Distortion, Low Power Op Amp DUAL OP-AMP, 500 uV OFFSET-MAX, 800 MHz BAND WIDTH, PDSO10
|
Intersil, Corp.
|
| ISL55290 ISL55290EVAL1Z ISL55290IUZ ISL55290IUZ-T1 |
Single and Dual Ultra-Low Noise, Ultra-Low Distortion, Low Power Op Amp
|
Intersil Corporation
|
| ISL55291IUZ ISL55291IUZ-T13 |
Single and Dual Ultra-Low Noise, Ultra-Low Distortion, Rail-to-Rail, Low Power Op Amp DUAL OP-AMP, 800 uV OFFSET-MAX, 800 MHz BAND WIDTH, PDSO10
|
Intersil, Corp.
|
| 05V28 05V10 05V19 12V10 12V19 12V28 48V19 48V28 48 |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits 模拟IC
Analog IC 模拟IC
|
Glenair, Inc.
HIROSE ELECTRIC Co., Ltd.
ON Semiconductor
RCD Components, Inc.
|
| MAX6720 MAX6720UTD-T MAX6729 MAX6717 MAX6722UTD-T |
Vcc1: 2.313 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 1.665 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.313 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.313 V, Vcc2: 1.665 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Dual/Triple Ultra-Low-Voltage SOT23 μP Supervisory Circuits
Dual/Triple Ultra-Low-Voltage SOT23 P Supervisory Circuits
Replaced by TPL9201 : Microcontroller Power Supply and Low-Side Driver 20-PDIP -40 to 125
Dual/Triple Ultra-Low-Voltage SOT23 レP Supervisory Circuits 三路、超低电压、SOT23封装、微处理器监控电
8-Bit Shift Register 16-PDIP -40 to 125 三路、超低电压、SOT23封装、微处理器监控电
Vcc1: 2.188 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 4.625 V,Vcc2: 3.075 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 2.188 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 2.188 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 1.665 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 1.665 V, Vcc2: 0.883 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1 4.625 V,Vcc2 3.075 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
|
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
Maxim Integrated Produc...
MAXIM - Dallas Semiconductor
|
| NJM2375 NJM2375A NJM2375AD NJM2375AL NJM2375AM NJM |
Ultra-Low-Power Dual Operational Amplifiers 8-SOIC -40 to 85 功率因数控制
POWER FACTOR CONTROLLER
|
New Japan Radio Co., Ltd.
NJRC[New Japan Radio]
|
| MIC862 |
Dual Ultra Low Power Op Amp in SOT-23-8
|
Micrel Semiconductor
|
| MIC863 MIC863BM5 MIC863BM8 |
DUAL ULTRA LOW POWER OP AMP IN SOT23-8
|
Micrel Semiconductor
|
| MAX1191ETI-T 1191 |
Ultra-Low-Power 7.5Msps Dual 8-Bit ADC
|
MAXIM - Dallas Semiconductor
|
| PMWD16UN PMWD16UN-01 |
Dual uTrenchMOS(TM) ultra low level FET
From old datasheet system
Dual mTrenchMOS ultra low level FET
|
Philips
|
| TSM934C |
Ultra Low-Power Single/Dual-Supply Comparators with Reference
|
Silicon Laboratories
|
|
