| PART |
Description |
Maker |
| TC58FVT160AXB-70 TC58FVB160AXB-70 TC58FVB160AFT-70 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
16-MBIT (2M 8 BITS / 1M 16 BITS) CMOS FLASH MEMORY
16-MBIT (2Mx8 BITS/1Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba Corporation
|
| TC58FVB321 TC58FVXB-70 TC58FVXB-10 TC58FVT321-70 |
32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY 32兆位分 200万6位）的CMOS闪存
CAT5E PATCH CORD 100MHZ 7 FOOT BLACK 32兆位分 200万6位）的CMOS闪存
32-MBIT (4M × 8 BITS / 2M × 16 BITS) CMOS FLASH MEMORY
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| 29F4000 MX29F400TTC-12 MX29F400TTC-90 |
4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY 256K X 16 FLASH 5V PROM, 120 ns, PDSO48
4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY 256K X 16 FLASH 5V PROM, 90 ns, PDSO48
|
Macronix International Co., Ltd.
|
| TC58FVB160FT-85 TC58FVT160FT-85 TC58FVB160FT-12 TC |
16-MBIT (2Mx8 BITS/1Mx16 BITS) CMOS FLASH MEMORY
|
TOSHIBA
|
| TC58FVM7B2AFT80 |
128MBIT (16Mx8 BITS/8Mx16 BITS) CMOS FLASH MEMORY
|
TOSHIBA
|
| K9F4G08U1M |
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
|
Samsung semiconductor
|
| MX29F400TM 29F4000 MX29F400TMC-90 MX29F400TTC-70 M |
4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY
|
MCNIX[Macronix International]
|
| 29F400C-55 29F400C-90 29F400C-70 |
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY
|
Macronix International Co., Ltd.
|
| W27E040 W27E040-90 M27E040 |
NVM > EPROM
IC,EEPROM,512KX8,DIP,32PIN,PLASTIC
FLASH MEMORY
From old datasheet system
|
Winbond Electronics Corp
|
| TC58FVB160FT-85 TC58FVT160FT-85 TC58FVB160FT-12 TC |
16-MBIT (2M x 8 BITS/1M x 16 BITS) CMOS FLASH MIMORY
16 MBIT CMOS FLASH MEMORY 16兆比特的CMOS闪存
|
Toshiba Corporation
Toshiba, Corp.
|
