| PART |
Description |
Maker |
| BLF369 |
VHF power LDMOS transistor
From old datasheet system
|
PHILIPS
|
| BLF4G20LS-110B |
From old datasheet system
UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies
|
Philips Semiconductors
NXP Semiconductors N.V.
|
| BLF6G22L-40BN |
40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| BLF6G22S-45112 |
Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor BLF6G22S-45<SOT608B (CDFM2)|<<http://www.nxp.com/packages/SOT608B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦，860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
| LK721-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| BLF2425M8LS140 |
Power LDMOS transistor
|
NXP Semiconductors
|
| BLF7G20L-200 |
Power LDMOS transistor
|
Philips Semiconductors
|
| BLF7G20L-140P112 BLF7G20L-140P118 BLF7G20LS-140P-1 |
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| LX703-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| BLF178XR112 SOT539A BLF178XRS |
Power LDMOS transistor
|
NXP Semiconductors
|
