| PART |
Description |
Maker |
| AS4C256K16E0 |
5V 256K×16 CMOS DRAM (EDO)(5V 256K×16 CMOS动态RAM（扩展数据总线
|
Alliance Semiconductor Corporation
|
| V53C16258L V53C16258SLT40 V53C16258SLT45 V53C16258 |
HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH
256K X 16 EDO DRAM, 50 ns, PDSO40
|
Mosel Vitelic, Corp.
Mosel Vitelic Corp
MOSEL-VITELIC
|
| MCM514256A MCM51L4256A |
256K x 4 CMOS DRAM
|
Motorola
|
| HY534256A HY534256AJ HY534256ALJ HY534256ALS HY534 |
256K x 4-bit CMOS DRAM
|
HYNIX[Hynix Semiconductor]
|
| TC514280BZLL-70 TC5116440BSJ-70 TC5116105BSJ-60 TC |
256K X 18 FAST PAGE DRAM, 70 ns, PZIP40 ZIP-40
4M X 4 OTHER DRAM, 70 ns, PDSO26
16M X 1 EDO DRAM, 60 ns, PDSO24
4M X 4 OTHER DRAM, 50 ns, PDSO26
16K X 4 CACHE SRAM, 10 ns, PDIP24
|
SIEMENS AG
|
| 29F002 MX29F002BQI-12 MX29F002NBQI-12 MX29F002TPI- |
DIODE SCHOTTKY 15V 2X20A TO247AD
DIODE SCHOTTKY 45V 2X20A TO247AD
MOSFET N-CH 500V 14A TO-247AD
Low Cost Precision Difet Operational Amplifier 8-SOIC 0 to 70
2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 55 ns, PDIP32
IC MOSFET DRIVER LS 4A DUAL 8DIP 256K X 8 FLASH 5V PROM, 90 ns, PQCC32
MOSFET N-CH 500V 20A TO-247AD 256K X 8 FLASH 5V PROM, 70 ns, PQCC32
2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 120 ns, PDSO32
2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 120 ns, PDIP32
2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 55 ns, PDSO32
|
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
| IDT71V416YS15YGI IDT71V416YS IDT71V416YL10BEG IDT7 |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V的CMOS静态RAM 4梅格56K x 16位）
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| HM514280ALZ-7 HM514280ALTT-7 HM514280ALJ-10 |
256K X 18 FAST PAGE DRAM, 70 ns, PZIP40
256K X 18 FAST PAGE DRAM, 70 ns, PDSO40
256K X 18 FAST PAGE DRAM, 100 ns, PDSO40
|
|
| MT4C16270 |
DRAM 256K X 16 DRAM 5V / EDO PAGE MODE
|
Micron Technology
|
| IDT71V416S10PHG IDT71V416S10PHGI IDT71V416S12PHG I |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 15 ns, PBGA48
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 10 ns, PDSO44
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| KM44C256C KM44C256C-6 KM44C256C-7 KM44C256C-8 KM44 |
256k x 4Bit CMOS DRAM with Fast Page Mode
256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode
|
Samsung Electronics
Samsung semiconductor
|
| V53C104 V53C104P-12 V53C104Z-70 V53C104Z-70L V53C1 |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM
|
MOSEL[Mosel Vitelic, Corp]
|
