| PART |
Description |
Maker |
| M5M5256DFP-70LLI M5M5256DVP-55LL M5M5256DFP-70XL M |
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位（32768 - Word位）的CMOS静态RAM
Memory>Low Power SRAM
|
Renesas Electronics Corporation.
Renesas Electronics, Corp.
RENESAS[Renesas Electronics Corporation]
|
| M5M5256DFP-10VLL-I M5M5256DFP-10VXL-I M5M5256DFP-1 |
From old datasheet system
262144-BIT CMOS STATIC RAM
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位（32768 - Word位）的CMOS静态RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| M5M5278DP M5M5278FP M5M5278J M5M5278VP-20V M5M5278 |
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TC551632J |
32768 Word x 16-Bit CMOS Static RAM
|
Toshiba Semiconductor
|
| M5M532R16J-10 M5M532R16J-12 M5M532R16J-15 M5M532R1 |
0.5 in Diameter, 200mA Single Deck Rotary Switch
From old datasheet system
524288-BIT CMOS STATIC RAM
524288-BIT (32768-WORD BY 16-BIT) CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| CDM-62256C CDM-62256C3 |
High Reliability CMOS 32768 x 8-Bit LSI Static RAM
|
Harris Semiconductor
|
| CXK5T8257BM CXK5T8257BM-10LLX CXK5T8257BM-12LLX CX |
32768-word X 8-bit High Speed CMOS Static RAM
|
SONY[Sony Corporation]
|
| HN613256FP HN613256P HN613256 |
word x 8-bit CMOS Mask Programmable Read Only Memory
32768 word x 8 Bit CMOS Programmable ROM
|
Hitachi Semiconductor
Renesas Technology
|
| MBM27C1028 MBM27C1028-15 MBM27C1028-20 MBM27C1028- |
CMOS 1M-Bit UV EROM
CMOS 1048576 BIT UV ERASABLE READ ONLY MEMORY
|
Fujitsu Limited
Fujitsu Component Limited.
Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
|
| M5M5V32R16J-12 M5M5V32R16J-10 M5M5V32R16J-15 M5M5V |
524288-BIT (32768-WORD BY 16-BIT) CMOS STATIC RAM
524288-BIT CMOS STATIC RAM
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 29C010PI-1 29C010PI-2 29C010PI-3 29C010JC-1 29C010 |
High speed 120 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM
High speed 150 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM
High speed 200 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 120 ns.
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 200 ns.
High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 150 ns.
|
Turbo IC
|
