| PART |
Description |
Maker |
| HMC838LP6CE |
FRACTIONAL-N SYNTHESIZER WITH INTEGRATED VCO 795 - 945, 1590 - 1890, 3180 - 3780 MHz
|
Hittite Microwave Corporation
|
| MRF5S21090LSR3 MRF5S21090L MRF5S21090LR3 |
2170 MHz, 19 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3 2170 MHz, 19 W Avg., 2 x CDMA, 28 V Lateral N-Channel RF Power MOSFETs
RF Power Field Effect Transistors
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| AGR09130E AGR09130EF AGR09130EU |
130 W, 921 MHz-960 MHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| AGR09030E AGR09030EF AGR09030EU |
30 W, 865 MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| AGR09090EF |
90 W, 865 MHz-960 MHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| MRF9180 MRF9180S |
MRF9180, MRF9180S 880 MHz, 170 W, 26 V Lateral N-Channel RF Power MOSFETs
880 MHz 170 W 26 V LATERAL N-CHANNEL RF POWER MOSFETs
880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3 |
MRF5S21100HR3, MRF5S21100HSR3 2170 MHz, 23 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
| PD21120R6 |
120 Watts, 2110-2170 MHz PD21120R6 PUSH/PULL LATERAL MOSFET
120 Watts, 2110-2170 MHz PUSH/PULL LATERAL MOSFET
|
TRIQUINT SEMICONDUCTOR INC
|
| MRF6P23190HR6 |
2400 MHz, 40 W Avg., 28 V, 2 x W鈥揅DMA Lateral N鈥揅hannel RF Power MOSFET
|
MOTOROLA
|
| MRF282SR1 MRF282ZR1 |
2000 MHz, 10 W, 26 V Lateral N–Channel Broadband RF Power MOSFET
|
Freescale (Motorola)
|
| MRF377MRF377R3MRF377R5 |
470–860 MHz, 240 W, 32 V Lateral N–Channel RF Power MOSFET
|
Motorola
|
| MRF6S19060N |
1930鈥?990 MHz, 12 W Avg., 28 V, 2 x N鈥揅DMA Lateral N鈥揅hannel RF Power MOSFETs
|
MOTOROLA
|
