| PART |
Description |
Maker |
| MRF6S19100H MRF6S19100HR3 MRF6S19100HR306 MRF6S191 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
Freescale Semiconductor, Inc
MOTOROLA
|
| MRF5S19100HSR3 MRF5S19100HD MRF5S19100HR3 |
1990 MHz, 22 W Avg., 28 V, 2 x N–CDMA Lateral N–Channel RF Power MOSFET
The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| EMRS-6X1_1 EMRS-6X1 EMRS-6X1TR EMRS-6X11 |
E-Series Surface Mount Mixer 925-960 MHz, 1805-1880 MHz, 1930-1990 MHz
|
MACOM[Tyco Electronics]
|
| AGR19180EF |
180 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
| GSC341-HYB1900 |
1850 MHz - 1990 MHz RF/MICROWAVE 90 DEGREE HYBRID COUPLER
|
|
| AGR19060E AGR19060EF AGR19060EU |
60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
| DB793SD5T-M |
1850 MHz - 1990 MHz ANTENNA-OTHER, 7 dBi GAIN, 105 deg 3dB BEAMWIDTH
|
|
| SPA1900/70/8/0/LH-TNC SPA1900/70/8/0/RH-TNC |
1850 MHz - 1990 MHz ANTENNA SUPPORT CIRCUIT, 7.8 dBi GAIN, 70 deg 3dB BEAMWIDTH
|
Ironwood Electronics
|
| PTF180601 |
LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz
|
Infineon Technologies A...
|
| PCS-09015-4DM |
1710 MHz - 1990 MHz BASE STATION/BROADCAST TRANSMISSION ANTENNA, 16.6 dBi GAIN, 90 deg 3dB BEAMWIDTH
|
CommScope, Inc.
|
