| PART |
Description |
Maker |
| EP1K50TC144-1DX EP1K50TI144-1DX EP1K50FC484-2F EP1 |
Single Volatile 32-Tap Digitally Controlled Potentiometer (XDCP™); Temperature Range: -40°C to 85°C; Package: 5-SOT-23 T&R
Single Volatile 32-Tap Digitally Controlled Potentiometer (XDCP™); Temperature Range: -40°C to 85°C; Package: 6-SC-70 T&R
Single Volatile 32-Tap Digitally Controlled Potentiometer (XDCP™); Temperature Range: -40°C to 85°C; Package: 6-SOT-23 T&R
Dual LDO with Low Noise, Low IQ, and High PSRR; Temperature Range: -40°C to 85°C; Package: 10-DFN
Single Volatile 32-Tap Digitally Controlled Potentiometer (XDCP™); Temperature Range: -40°C to 85°C; Package: 5-SC-70 T&R
Field Programmable Gate Array (FPGA) 现场可编程门阵列（FPGA
Field Programmable Gate Array (FPGA) 现场可编程门阵列FPGA
Single Volatile 32-Tap Digitally Controlled Potentiometer (XDCP™); Temperature Range: -40°C to 85°C; Package: 6-SC-70 T&R 现场可编程门阵列（FPGA
Single Volatile 32-Tap Digitally Controlled Potentiometer (XDCP™); Temperature Range: -40°C to 85°C; Package: 5-SOT-23 T&R
|
Taiyo Yuden Co., Ltd.
Nihon Inter Electronics, Corp.
Vectron International, Inc.
Samsung Semiconductor Co., Ltd.
|
| NDS9952ANL |
Dual N & P-Channel Enhancement Mode Field Effect Transistor 3.7 A, 30 V, 0.08 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| EDI8F3265C20MZC EDI8F3265C20MMC |
High Speed, Dual Channel Power MOSFET Drivers; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R X32号的SRAM模块
|
TE Connectivity, Ltd.
|
| FDMC7570S |
25V N-Channel Power Trench® SyncFET™; 8-Power-33; Tape and Reel
N-Channel Power Trench垄莽 SyncFET 25 V, 40 A, 2 m楼?
N-Channel Power Trench? SyncFET 25 V, 40 A, 2 mΩ
|
FAIRCHILD SEMICONDUCTOR CORP
|
| IRFS644BFP001 |
250V N-Channel B-FET / Substitute of IRFS644 & IRFS644A; ; No of Pins: 3; Container: Rail 14 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| IRFP254BFP001 |
250V N-Channel B-FET / Substitute of IRFP254 & IRFP254A; ; No of Pins: 3; Container: Rail 25 A, 250 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| FDC699PF077 |
P-Channel 2.5V Power Mosfet MOSFET Recommend FDC699P_F077; Package: SSOT-6 FLMP; No of Pins: 6; Container: Tape & Reel 7 A, 20 V, 0.022 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| FQB50N06LTM |
60V N-Channel Logic level QFET; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape & Reel 52.4 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
Fairchild Semiconductor, Corp.
|
| FCB20N60TM |
600V N-Channel SuperFET; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape & Reel 20 A, 600 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
|
Fairchild Semiconductor, Corp.
|
| FCB11N60TM |
600V N-Channel SuperFET; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape & Reel 11 A, 600 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
|
Fairchild Semiconductor, Corp.
|
| FQD7N20LTF |
200V N-Channel Logic Level QFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 5.5 A, 200 V, 0.78 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
Fairchild Semiconductor, Corp.
|
|
