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K4S64163LH-RE - 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC 0 to 70

K4S64163LH-RE_543078.PDF Datasheet

 
Part No. K4S64163LH-RE K4S64163LH-RBE K4S64163LH-N K4S64163LH-G K4S64163LH-F1L K4S64163LH-C K4S64163LH K4S64163LH-F1H K4S64163LH-F75 K4S64163LH-L K4S64163LH-RL1H0
Description 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC 0 to 70

File Size 110.46K  /  12 Page  

Maker

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.



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 Full text search : 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC 0 to 70
 Product Description search : 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC 0 to 70


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