| PART |
Description |
Maker |
| 6MBI25LB-120 |
IGBT(1200V 25A) 25 A, 1200 V, N-CHANNEL IGBT
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| SDR1-12 SDR1-12S SDR1-12SMS SDR1-12SMSS SDR1-12SMS |
1 A, 1200 V, SILICON, SIGNAL DIODE
1.0 AMP 1200 - 1600 VOLTS 70 nsec ULTRA FAST RECTIFIER
|
SOLID STATE DEVICES INC
Solid States Devices, Inc
|
| 53M15-02-1-24N-C 53M15-01-1-24N-C 57HS22-05-1-16N- |
1.125 Dia., 1/4 Amp Multi Deck Rotary Switch ROTARY SWITCH-24POSITIONS, SP24T, LATCHED, 0.25A, 30VDC, PANEL MOUNT-THREADED
Multi-Deck Rotary Switches
ROTARY SWITCH-2POSITIONS, 3PDT, LATCHED, 0.25A, 30VDC, PANEL MOUNT-THREADED
ROTARY SWITCH-5POSITIONS, 3P5T, LATCHED, 0.25A, 30VDC, PANEL MOUNT-THREADED
ROTARY SWITCH-2POSITIONS, 5PDT, LATCHED, 0.25A, 30VDC, PANEL MOUNT-THREADED
ROTARY SWITCH-24POSITIONS, SP24T, LATCHED, 0.25A, 28VDC, PANEL MOUNT-THREADED
ROTARY SWITCH-2POSITIONS, 3PDT, LATCHED, 0.25A, 28VDC, PANEL MOUNT-THREADED
ROTARY SWITCH-8POSITIONS, 3P8T, LATCHED, 0.25A, 28VDC, PANEL MOUNT-THREADED
ROTARY SWITCH-2POSITIONS, 7PDT, LATCHED, 0.25A, 28VDC, PANEL MOUNT-THREADED
Smallest Diameter Rotary Switch with this Number of Positions and Current Capacity
|
Grayhill, Inc.
GRAYHILL INC
|
| SB250-05H |
50V, 25A Rectifier Schottky Barrier Diode (Twin Type Cathode Common)
50V 25A Rectifier
|
SANYO[Sanyo Semicon Device]
|
| APT50GT120B2RDQ2G |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: T-MAX™ [B2]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 50; 94 A, 1200 V, N-CHANNEL IGBT, TO-247
|
Microsemi, Corp.
|
| P101 P124 P121 P103 P135K P100 P101K P101KW P101W |
1200V 25A 2 SCR Lateral Bridge in a PACE-Pak package
1000V 25A 2 SCR Lateral Bridge with Voltage Suppression in a PACE-Pak package
1000V 25A 2 SCR Lateral Bridge in a PACE-Pak package
800V 25A 2 SCR Lateral Bridge with Voltage Suppression in a PACE-Pak package
800V 25A 2 SCR Lateral Bridge in a PACE-Pak package
600V 25A 2 SCR Lateral Bridge with Voltage Suppression in a PACE-Pak package
600V 25A 2 SCR Lateral Bridge in a PACE-Pak package
400V 25A 2 SCR Lateral Bridge with Voltage Suppression in a PACE-Pak package
400V 25A 2 SCR Lateral Bridge in a PACE-Pak package
1200V 25A 2 SCR Traverse Bridge with Free Wheeling Diode in a PACE-Pak package
1200V 25A 2 SCR Traverse Bridge with Voltage Suppression and Free Wheeling Diode in a PACE-Pak package
1200V 25A 2 SCR Traverse Bridge with Voltage Suppression in a PACE-Pak package
1200V 25A 2 SCR Traverse Bridge in a PACE-Pak package
1000V 25A 2 SCR Traverse Bridge with Free Wheeling Diode in a PACE-Pak package
1000V 25A 2 SCR Traverse Bridge with Voltage Suppression and Free Wheeling Diode in a PACE-Pak package
1000V 25A 2 SCR Traverse Bridge with Voltage Suppression in a PACE-Pak package
1000V 25A 2 SCR Traverse Bridge in a PACE-Pak package
800V 25A 2 SCR Traverse Bridge with Free Wheeling Diode in a PACE-Pak package
800V 25A 2 SCR Traverse Bridge with Voltage Suppression and Free Wheeling Diode in a PACE-Pak package
800V 25A 2 SCR Traverse Bridge with Voltage Suppression in a PACE-Pak package
800V 25A 2 SCR Traverse Bridge in a PACE-Pak package
600V 25A 2 SCR Traverse Bridge with Free Wheeling Diode in a PACE-Pak package
600V 25A 2 SCR Traverse Bridge with Voltage Suppression and Free Wheeling Diode in a PACE-Pak package
600V 25A 2 SCR Traverse Bridge with Voltage Suppression in a PACE-Pak package
600V 25A 2 SCR Traverse Bridge in a PACE-Pak package
400V 25A 2 SCR Traverse Bridge with Free Wheeling Diode in a PACE-Pak package
400V 25A 2 SCR Traverse Bridge with Voltage Suppression and Free Wheeling Diode in a PACE-Pak package
400V 25A 2 SCR Traverse Bridge with Voltage Suppression in a PACE-Pak package
400V 25A 2 SCR Traverse Bridge in a PACE-Pak package
From old datasheet system
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS
GT 3C 3#16S PIN RECP BOX RM
|
IRF[International Rectifier]
|
| CM400DU-24F |
Dual IGBTMOD 400 Amperes/1200 Volts 400 A, 1200 V, N-CHANNEL IGBT
|
Powerex Power Semiconductor...
Powerex Power Semiconductors
Powerex, Inc.
|
| SDR4512M |
45 AMP 1200 VOLTS 80 nsec RECTIFIER 45 A, 1200 V, SILICON, RECTIFIER DIODE, TO-254AA
|
Solid State Devices, Inc.
|
| APT150GN120JDQ4 |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 1200; IC (A): 99; 215 A, 1200 V, N-CHANNEL IGBT
Thunderbolt IGBT
|
Microsemi, Corp.
Microsemi Corporation
|
| APT100GT120JR |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 60; 123 A, 1200 V, N-CHANNEL IGBT
Thunderbolt IGBT
|
Microsemi, Corp.
Microsemi Corporation
|
|
