| PART |
Description |
Maker |
| NDL7540PA NX8561JD NX7460LE NX7460LE-BA NX7460LE-C |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE 1 480纳米掺铒光纤放大器的应用InGaAsP的应变量子阱的DC -异质结激光二极管模块
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE 掺铒光纤放大 480纳米的应用InGaAsP的应变量子阱的DC -异质结激光二极管模块
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NX8563LB429 NX8563LB429-BA NX8563LB429-CA NX8563LB |
CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS 连续光源InGaAsP的应变量子阱激光器激光二极管模块D -波分复用应用
CONVERTER DC-DC 1W 5V/14V DUAL 连续光源InGaAsP的应变量子阱激光器激光二极管模块的D -波分复用应用
CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS 连续光源InGaAsP的应变量子阱激光器激光二极管模块的D -波分复用应用
ER 8C 8#12 SKT RECP LINE
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NX7663JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX7363JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX7663JB-BC-AZ |
InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION
|
California Eastern Laboratories
|
| NDL7513P NDL7514P1 NDL7515P1C NDL7515PC NDL7514P N |
InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
NEC Corp.
|
| NDL7620P NDL7620P1 NDL7620P1C NDL7620P1D NDL7620P2 |
1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW-DFB LASER DIODE COAXIAL MODULE FOR 2.5 Gb/s
|
NEC
|
| KLT-255544 |
1550nm InGaAsP strained MQW DFB-LD
|
KODENSHI KOREA CORP.
|
| ML7XX12 ML785B12 |
InGaAsP-MQW-FP LASER DIODES ARRATS
InGaAsP - MQW - FP LASER DIODE ARRAYS
|
Mitsubishi Electric Corporation
|
| KLT-249414 |
1490nm InGaAsP strained MQW DFB LD for 1.25G TO CAN
|
KODENSHI KOREA CORP.
|
| KLT-155452 |
1550nm InGaAsP strained MQW for FP-LD 2mm ball lens TO CAN
|
KODENSHI KOREA CORP.
|
