| PART |
Description |
Maker |
| U1FWJ44M |
SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE HIGH SPEED RECTIFIER APPLICATIONS
TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| KDR357 |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KDR393 |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
KEC Holdings
|
| KDR367E |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| U1FWJ44N |
SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE HIGH SPEED RECTIFIER APPLICATIONS
|
TOSHIBA
|
| 1GWJ43 |
SCHOTTKY BARRIER (HIGH SPEED RECTIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| HSB88WA |
SILICON SCHOTTKY BARRIER DIODE FOR HIGH SPEED SWITCHING
|
RENESAS[Renesas Electronics Corporation]
|
| HSC226 |
Silicon Schottky Barrier Diode for High Speed Switching
|
Renesas Electronics Corporation
|
| HSB276AYP |
Silicon Schottky Barrier Diode for High Speed Switching
|
Renesas Electronics Corporation
|
| HSB88AS |
Silicon Schottky Barrier Diode for High Speed Switching
|
Renesas Electronics Corporation
|
| HSU227 |
Silicon Schottky Barrier Diode for High Speed Switching
|
Renesas Electronics Corporation
|
| HSB0104YP |
Silicon Schottky Barrier Diode for High Speed Switching
|
Renesas Electronics Corporation
|
