| PART |
Description |
Maker |
| K9F6408U0A-TCB0 K9F6408U0A-TIB0 |
From old datasheet system
EEPROM,NAND FLASH,8MX8,CMOS,TSOP,44PIN,PLASTIC
8M x 8 Bit NAND Flash Memory
|
SAMSUNG[Samsung semiconductor]
Samsung Electronics Inc
|
| K9F1G08Q0M-PCB0 K9F1G08Q0M-PIB0 K9F1G08Q0M-YCB0 K9 |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
1Gb Gb 1.8V NAND Flash Errata
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| CA20C03A20EP CA20C03A-20IP CA20C03A-20IN CA20C03A2 |
N-CHANNEL 550V @Tjmax - 2.5 Ohm - 3A DPAK/IPAK ZENER-PROTECTED MDMESH POWER MOSFET
Dual 2-input NAND gate
DUAL 2-INPUT OPEN DRAIN NAND GATE
Dual bilateral switch
8-bit MCU with Flash or ROM memory, ADC, two 16-bit timers, I2C, SPI, SCI interfaces
8-bit microcontroller with single voltage Flash memory, data EEPROM, ADC, timers, SPI 数据加密处理
ST7LITE2 - 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, TIMERS, SPI 数据加密处理
Dual 2-input exclusive OR gate 数据加密处理
|
Belden, Inc.
3M Company
|
| HY27UH088G2M HY27UH088GDM |
8G-Bit NAND Flash Memory
|
Hynix Semiconductor
|
| KM29U64000T KM29U64000IT |
8M x 8 Bit NAND Flash Memory
|
Samsung Electronic
|
| KM29W32000TS |
4M x 8-Bit NAND Flash Memory
|
Samsung Semiconductor
|
| KM29U64000IT KM29U64000T |
8M x 8 Bit NAND Flash Memory
|
Samsung semiconductor
|
| KM29V64001TS KM29V64001RS |
8M X 8 BIT NAND FLASH MEMORY
|
Samsung semiconductor
|
| K9F6408U0B-TIB0 K9F6408U0B-TCB0 |
8M x 8 Bit NAND Flash Memory 8米8位NAND闪存
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K9F1208D0B K9F1208B0B K9F1208U0 |
64M x 8 Bit NAND Flash Memory
|
Samsung Electronic
|
| K9F2808U0M- K9F2808U0M-YCB0 K9F2808U0M-YIB0 |
16M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
