| PART |
Description |
Maker |
| GN1L4M GN1L4M-T2 GN1L4M-T1 |
Hybrid transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR
|
NEC
|
| GA1L3N GA1L3N-T2 GA1L3N-T1 |
Hybrid transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
|
NEC[NEC]
|
| GN1L3Z GN1L3Z-T2 GN1L3Z-T1 |
Hybrid transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR
|
NEC
|
| GN1F4N GN1F4N-T1 GN1F4N-T2 |
Hybrid transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR
|
NEC
|
| GA1L4Z GA1L4Z-T2 |
Hybrid transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
|
NEC[NEC]
|
| GN1F4M GN1F4M-T2 GN1F4M-T1 |
Hybrid transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR
|
NEC
|
| TWA8-48S15 TWA8-48-5 TWA8-48S3.3 TWA8-24S5 TWA8-48 |
Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 Ohm
Emitter switched bipolar transistor ESBT® 1200 V - 8 A - 0.10 Ohm
Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module
Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ohm
Emitter switched bipolar transistor ESBT® 1700V - 4A - 0.17 Ohm
Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 Ohm 模拟IC
Analog IC 模拟IC
|
Bourns, Inc.
|
| STC03DE170HV07 STC03DE170HV |
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 }
Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W
|
ST Microelectronics
STMicroelectronics
|
| DXT2013P5-13 DXT2013P5 DXT2013P5-15 |
100V PNP MEDIUM POWER TRANSISTOR PowerDI垄莽5
100V PNP MEDIUM POWER TRANSISTOR PowerDI庐5
100V PNP MEDIUM POWER TRANSISTOR PowerDI?5
|
Diodes Incorporated
|
| AP1L3N AP1A3M AP1A4A AP1A4M AP1F3P AP1J3P AP1L2Q A |
on-chip resistor NPN silicon epitaxial transistor
Hybrid transistor
|
NEC Corp.
NEC[NEC]
|
