| PART |
Description |
Maker |
| FHX13X FHX14X |
GaAs FET & HEMT Chips
|
Eudyna Devices Inc
|
| FLK107XV |
GaAs FET & HEMT Chips
|
Eudyna Devices Inc
|
| FLK017XP |
GaAs FET & HEMT Chips
|
Eudyna Devices Inc
|
| CF004_06 CF004 CF004-01 CF004-02 CF004-03 |
GaAs Pseudomorphic HEMT and MESFET Chips KA BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
|
Mimix Broadband, Inc.
MIMIX[Mimix Broadband]
|
| HMC-APH478 H478 |
18000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
GaAs HEMT MMIC 1 WATT POWER AMPLIFIER, 18 - 20 GHz
GaAs HEMT MMIC POWER AMPLIFIER
|
Hittite Microwave Corporation
|
| HMC-APH510 |
GaAs HEMT MMIC POWER AMPLIFIER
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 37 - 40 GHz
|
Hittite Microwave Corporation
|
| HMC-APH403 |
GaAs HEMT MMIC POWER AMPLIFIER
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 37 - 45 GHz
|
Hittite Microwave Corporation
|
| HMC-APH196 |
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 17 - 30 GHz
GaAs HEMT MMIC POWER AMPLIFIER
|
Hittite Microwave Corporation
|
| MGF0910A 0910A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L S BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| NEZ7785-15D NEZ4450-15D NEZ4450-15DD NEZ3642-15D N |
20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor 15瓦C波段砷化镓场效应管N沟道砷化镓场效应晶体
15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| MGF4953B11 |
Low Noise GaAs HEMT
|
Mitsubishi Electric Semiconductor
|
| HMC-ALH310 |
GaAs HEMT LOW NOISE AMPLIFIER, 37 - 42 GHz
|
Hittite Microwave Corporation
|
