| PART |
Description |
Maker |
| LC72725KVS |
CMOS IC RDS(RBDS) Demodulation IC
|
Sanyo Semicon Device
|
| SI4622-A10 |
High-Performance, Single-Chip FM HD-Radio/RDS/RBDS
|
Silicon Laboratories
|
| KDS8928A |
N-Channel 5.5 A, 30 V RDS(ON) = 0.030 RDS(ON) = 0.038 -4 A, -20 V RDS(ON) = 0.055
Dual N & P-Channel Enhancement Mode MOSFET
|
TY Semiconductor Co., L...
TY Semicondutor
|
| LC72713W 1378 |
FMSS (DARC) and RDS Devices: For use in mobile FM multiplex broadcast demodulation (DARC) includes a built-in VICS decoder
From old datasheet system
CMOS IC
|
Sanyo
|
| N74F538D N74F538N 74F538 |
1-of-8 decoder (3-State)
1-of -8 decoder (3?state)
1-of -8 decoder 3-state F/FAST SERIES, OTHER DECODER/DRIVER, CONFIGURABLE OUTPUT, PDIP20
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| S5573 |
MOSFET, Switching; VDSS (V): 600; ID (A): 30; Pch : 200; RDS (ON) typ. (ohm) @10V: 0.2; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
|
Hamamatsu Photonics
|
| SSG4512CE SSG4512CE-15 |
N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V, RDS(ON) 31 m P-Ch: -5.2 A, -30 V, RDS(ON) 52 m
|
SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
|
| SSG4502CE |
N & P-Ch Enhancement Mode Power MOSFET N-Ch: 10.0 A, 30 V, RDS(ON) 16 m P-Ch: -8.5A, -30 V, RDS(ON) 23 m
|
SeCoS Halbleitertechnologie GmbH
|
| S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
| IRFM250 |
N-Channel Power MOSFET(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）7.4A，的Rds（on）：0.100Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）7.4A时，RDS（对）：0.100Ω））
|
Electronic Theatre Controls, Inc.
SEME-LAB
Seme LAB
|
| KDS8958 |
N-Channel 7.0 A, 30 V RDS(ON) = 0.028 RDS(ON) = 0.040 Fast switching speed
Dual N & P-Channel PowerTrench MOSFET
|
TY Semiconductor Co., L...
TY Semicondutor
|
