| PART |
Description |
Maker |
| ADG901 ADG901BCP-500RL7 ADG901BCP-REEL7 ADG901BRM |
Wideband, 40 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, SPST Switches
|
AD[Analog Devices]
|
| ADG918BRM-500RL7 ADG918BCPZ-500RL7 ADG918BCP-500RL |
Wideband, 43 dB Isolation @ 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT Switches
|
Analog Devices
|
| EVAL-ADG902EB ADG902BRMZ1 ADG901BRMZ1 ADG901BCPZ-R |
Wideband, 40 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, SPST Switches
Wideband, 40 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, SPST Switches
|
Analog Devices
|
| D2219UK D2219 |
METAL GATE RF SILICON FET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应2.5W-12.5V-1GHz,单端)
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| ADG936 ADG936-R |
Wideband 4 GHz 36 dB Isolation at 1 GHz CMOS 1.65V to 2.75V Dual SPDT
|
Analog Devices
|
| D2213UK D2213 |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-12.5V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应20W-12.5V-1GHz,推拉)
|
SEME-LAB[Seme LAB]
|
| D2210UK D1231UK D2010 D2010UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应20W-12.5V-1GHz,单端)
|
SEME-LAB[Seme LAB]
|
| BFG505W BFG505W_X BFG505W/X |
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
NPN 9 GHz wideband transistors
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| ISO120G |
ISOLATION AMPLIFIER, 1500 V ISOLATION-MIN, 60 kHz BAND WIDTH, CDIP16
|
|
| BM6101FV-CE2 BM6101FV-E2 |
Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation
|
Rohm
|
