PART |
Description |
Maker |
TC58DVM92A1FT00 |
512M-Bit CMOS NAND EPROM
|
Toshiba
|
MX27C8000A MX27C8000AMC-10 MX27C8000AMC-12 MX27C80 |
8M-BIT [1M x8] CMOS EPROM 1M X 8 OTPROM, 90 ns, PQCC32 JT 21C 21#16 SKT RECP 1M X 8 OTPROM, 90 ns, PDSO32 Single Output LDO, 100mA, Fixed(3.0V), Low Quiescent Current, Thermal Protection 5-SOT-23 1M X 8 OTPROM, 120 ns, PDSO32 8M-BIT [1M x8] CMOS EPROM 1M X 8 OTPROM, 120 ns, PQCC32 8M-BIT [1M x8] CMOS EPROM 1M X 8 OTPROM, 100 ns, PQCC32 8M-BIT [1M x8] CMOS EPROM 1M X 8 OTPROM, 90 ns, PDIP32
|
Macronix International Co., Ltd. MCNIX[Macronix International]
|
TC58128FT |
128M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
K9K4G08U0M |
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
|
SAMSUNG
|
TC58256FT |
CMOS NAND EPROM
|
Toshiba
|
TC58NVG0S3AFT00 |
1 GBit CMOS NAND EPROM
|
Toshiba
|
KM29W040AT KM29W040AIT |
V(cc): 2.7 -3.6V; 512M x 8 bits NAND flash memory 512K x 8 bit NAND Flash Memory
|
Samsung semiconductor Samsung Electronic
|
TC58NS256BDC |
256 MBit CMOS NAND EPROM
|
Toshiba
|
HN27C101G HN27C101AG-17 |
IC EPROM UV 1MBIT 128K x 8 170NS 32CDIP 131072 word x 8 Bit CMOS UV EPROM
|
Renesas Technology / Hitachi Semiconductor
|
MX25UM51245G |
1.8V 512M-BIT [x 1/x 8] CMOS MXSMIO
|
Macronix International
|
NM27C240 NM27C240QE120 |
4 Meg (256K x 16) High Performance CMOS EPROM [Life-time buy] 4,194,304-Bit (256k x 16) High Performance CMOS EPROM 4 /194 /304-Bit (256k x 16) High Performance CMOS EPROM 4,194,304位(256k × 16)高性能的CMOS存储
|
FAIRCHILD[Fairchild Semiconductor]
|
K9F4008W0A K9F4008W0A- K9F4008W0A-TCB0 K9F4008W0A- |
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory 512K x 8 bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|