| PART |
Description |
Maker |
| BFR949L3 |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers in TSLP-3
|
Infineon Technologies AG
|
| BFP182R |
NPN Silicon RF Transistor
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
|
Infineon Technologies AG
|
| BF799W |
RF-Bipolar - For linear broadband amplifier application up to 500 MHz and as SAW filter driver in TV tuners
NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| MRF20030RD |
MRF20030R 2 GHz, 30 W, 26 V Broadband RF Power Bipolar Transistor - Archived
|
Motorola
|
| MJW0281A MJW0281A05 MJW0302A MJW0281ADATASHEET MJW |
Complementary NPN?PNP Power Bipolar Transistors
; Package: SOIC NARROW; No of Pins: 14; Qty per Container: 55/Rail 15 A, 260 V, PNP, Si, POWER TRANSISTOR, TO-247AD
Complementary NPN-PNP Power Bipolar Transistors
Complementary Power Transistors
|
ON Semiconductor
http://
|
| MRF329 |
BROADBAND RF POWER TRANSISTOR NPN SILICON
|
Motorola, Inc
Tyco Electronics
|
| MRF325 |
BROADBAND RF POWER TRANSISTOR NPN SILICON
|
MOTOROLA[Motorola, Inc]
|
| MRF317 |
BROADBAND RF POWER TRANSISTOR NPN SILICON
|
MOTOROLA[Motorola, Inc]
|
| ISL55013 ISL55013IEZ-T7 |
MMIC Silicon Bipolar Broadband Amplifier
|
Intersil Corporation
|
| M306N0FGTFP M306N0MCT |
60 W / 225 to 400 MHz CONTROLLED Q BROADBAND RF POWER TRANSISTOR NPN SILICON
60 W, 225 to 400 MHz CONTROLLED Q BROADBAND RF POWER TRANSISTOR NPN SILICON
60 W, 225 to 400 MHz CONTROLLED Q?BROADBAND RF POWER TRANSISTOR NPN SILICON
|
Tyco Electronics
|
| 2N5429.MOD 2N5429 |
Bipolar NPN Device in a Hermetically sealed TO66
7 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-213AA
|
Seme LAB
SEMELAB LTD
|
| 2N4231A 2N4231A-JQR-AR1 |
5 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-213AA
Bipolar NPN Device in a Hermetically sealed TO66
|
SEMELAB LTD
Seme LAB
|
