| PART |
Description |
Maker |
| S7686 |
MOSFET, Switching; VDSS (V): -60; ID (A): -5; Pch : 20; RDS (ON) typ. (ohm) @10V: 0.14; RDS (ON) typ. (ohm) @4V[4.5V]: 0.2; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 10.8; Package: DPAK (L)- (2)
|
Hamamatsu Photonics
|
| KGF1305T |
Power FET (Ceramic Package Type)
From old datasheet system
|
OKI electronic componet...
OKI electronic componets
OKI electronic eomponets
|
| KGF1321S |
Power FET (Ceramic Package Type)
From old datasheet system
|
OKI
|
| STL40C30H3LL |
N-channel 30 V, 0.019 Ohm typ., 10 A, P-channel 30 V, 0.024 Ohm typ., 8 A STripFET(TM) V Power MOSFET in a PowerFLAT(TM) 5x6 d. i. package
|
ST Microelectronics
|
| STU6N60M2 STF6N60M2 STP6N60M2 |
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in IPAK package
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220FP package
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package
|
ST Microelectronics
|
| AIDM9 AIDM17J AIDM150 AIDM125 AIDM13G AIDM175 AIDM |
2-Channel Differential Input 24-Bit No Latency Delta Sigma ADC; Package: SSOP; No of Pins: 16; Temperature Range: 0°C to 70°C
.): 1Mbit/s; Current Transfer Ratio: 10% (min) (19% (min) for rank O) @I_F(IN)=16mA; Isolation voltage BVs @1minute (min) (V_rms): 5000; Safety Standard
24-Bit µPower No Latency Delta-Sigma ADC in SO-8; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C
IF Wave Detection ICs; Application: Cordless Telephone; Operating Voltage: 1.8-5.5V; Package: SSOP16 (0.65); Comments: Mixer/ IF Amp/ Noise Detection
) Typ.: 4.5; Package Type: 2-11D1B
) Typ.: 2.5; Package Type: 2-11D1B
IC Output Photocouplers and Photorelays; Features: Buffer logic type(totem pole output); Package: MFSOP6; Surface Mount Type: Y; Number of Pins: 5
IC Output Photocouplers and Photorelays; Features: Inverter logic type(totem pole output); Package: SDIP6; Surface Mount Type: Y; Number of Pins: 6
Serial 12-Bit, 3.5Msps Sampling ADCs with Shutdown; Package: MSOP; No of Pins: 10; Temperature Range: -40°C to 85°C
High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: Y; Package: PW-MINI; Number Of Pins: 3; Publication Class: High Frequency Switching Power Transistor
MOSFETs - Nch VDSS=30V; Surface Mount Type: N; Package: PW-MOLD; R DS On (Ω): (max 0.12) (max 0.1); I_S (A): (max 5)
C-Band Power GaAs IMFETs; Frequency Band (GHz): 3.4-3.8; P1dB (dBm): 42.5; G1dB (dB): 12.5; Ids (A) Typ.: 4.4; IM3 (dBc) Typ.: -45; Rth (°C/W) Typ.: 1.5; Package Type: 2-16G1B 逻辑IC
C-Band Power GaAs IMFETs; Frequency Band (GHz): 5.0-5.3; P1dB (dBm): 42.5; G1dB (dB): 8.5; Ids (A) Typ.: 4.4; IM3 (dBc) Typ.: -45; Rth (°C/W) Typ.: 1.5; Package Type: 2-16G1B 逻辑IC
Logic IC 逻辑IC
C-Band Power GaAs IMFETs; Frequency Band (GHz): 5.3-5.9; P1dB (dBm): 45.5; G1dB (dB): 8.5; Ids (A) Typ.: 8; IM3 (dBc) Typ.: -45; Rth (°C/W) Typ.: 1.2; Package Type: 2-16G1B 逻辑IC
C-Band Power GaAs IMFETs; Frequency Band (GHz): 5.9-6.4; P1dB (dBm): 38.5; G1dB (dB): 10; Ids (A) Typ.: 1.6; IM3 (dBc) Typ.: -47; Rth (°C/W) Typ.: 3.8; Package Type: 2-11D1B 逻辑IC
MOSFETs - Nch VDSS=30V; Surface Mount Type: N/Y; Package: TO-220FL/SM; R DS On (Ω): (max 0.02); I_S (A): (max 45)
|
Glenair, Inc.
Square D by Schneider Electric
|
| STF6N65M2 STU6N65M2 |
N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in TO-220FP package
N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package
|
ST Microelectronics
|
| STD1HN60K3 STU1HN60K3 |
N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in DPAK package
N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in IPAK package
|
ST Microelectronics
|
| STD7N52DK3 STF7N52DK3 STP7N52DK3 |
N-channel 525 V, 0.95 Ohm typ., 6 A SuperFREDmesh(TM) 3 Power MOSFET in DPAK package
N-channel 525 V, 0.95 Ohm typ., 6 A SuperFREDmesh(TM) 3 Power MOSFET in TO-220FP package
|
ST Microelectronics
|
| 1SS193 |
Small Package Low forward voltage :VF(3) = 0.9 V(Typ.) Small Total Capacitance :CT = 0.9pF(Typ.)
|
TY Semiconductor Co., Ltd
|
| STP9N60M2 STD9N60M2 |
Extremely low gate charge
N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK package
N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package
|
STMicroelectronics
ST Microelectronics
|
