| PART |
Description |
Maker |
| ESJC13 |
HIGH VOLTEGE DIODE
|
FUJI[Fuji Electric]
|
| MDD172-16N1 MDD172 MDD172-08N1 MDD172-12N1 MDD172- |
High Power Diode Modules 大功率二极管模块
High Power Diode Modules 190 A, 1600 V, SILICON, RECTIFIER DIODE
High Power Diode Modules 190 A, 800 V, SILICON, RECTIFIER DIODE
High Power Diode Modules 190 A, 1800 V, SILICON, RECTIFIER DIODE
Thyristor and Rectifiers Modules
|
IXYS, Corp.
IXYS Corporation
|
| ZHCS1006 ZHCS1006TA |
SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ”SuperBAT?/a>
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ??uperBAT??/td>
| SOT-23
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SuperBAT
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE B>SuperBAT
DIODE SCHOTTKY SOT-23 肖特基二极管采用SOT - 23
High Current Schottky Diode
|
Fairchild Semiconductor
Zetex Semiconductors
Zetex Semiconductor PLC
|
| HSMS-2700-BLK HSMS-2700-TR2 HSMS-2702-BLK HSMS-270 |
HSMS-270C · High power clipping/clamping diode
HSMS-270B · High power clipping/clamping diode
HSMS-2702 · High power clipping/clamping diode
HSMS-2700 · High power clipping/clamping diode
High Performance Schottky Diode for Transient Suppression
|
Agilent (Hewlett-Packard)
Agilent(Hewlett-Packard)
|
| Q62702-B915 BBY57-02W BBY5702W |
From old datasheet system
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance High capacitance ratio)
|
Siemens Group
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| IKP20N65F5 |
high power thyristor diode
650V DuoPack IGBT and Diode High speed switching series fifth generation
|
Infineon Technologies AG
Infineon Technologies A...
|
| 1N457 1N457AT50R 1N457T50R 1N457ATR 1N457TR |
High Conductance Low Leakage Diode; Package: DO-35; No of Pins: 2; Container: Bulk 0.2 A, 70 V, SILICON, SIGNAL DIODE, DO-35
Small Signal Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| 1N4454 1N4454T50R 1N4454TR |
High Conductance Ultra Fast Diode 0.2 A, SILICON, SIGNAL DIODE, DO-35
High Conductance Ultra Fast Diode; Package: DO-35; No of Pins: 2; Container: Tape & Reel 0.2 A, SILICON, SIGNAL DIODE, DO-35
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| BAV99 BAV99L-AN3-R BAV99-AE3-R BAV99-AL3-R BAV99-A |
HIGH CONDUCTANCE ULTRA FAST DIODE 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
HIGH CONDUCTANCE ULTRA FAST DIODE 高电导超快速二极体
|
UNISONIC TECHNOLOGIES CO LTD
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
??『绉???′唤??????
|
| ZHCS500 UZHCS500 ZHCS500TA |
DIODE SCHOTTKY SOT-23
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT?/a>
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT”
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SuperBAT
SOT23 SILICON HIGH CURRENT
0.5 A, SILICON, SIGNAL DIODE
High Current Schottky Diode
|
ZETEX[Zetex Semiconductors]
Diodes Incorporated
|
| 200FXH13 E000411 200FXG13 |
DIODE(HIGHSPEEDRECTIFIERAPPLICATIONS)
DIODE (HIGH SPEED RECTIFIER APPLICATIONS)
From old datasheet system
|
ToshibaSemiconductor
Toshiba Semiconductor
|
