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BC856S - GaAs MMIC (Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package) From old datasheet system PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

BC856S_496999.PDF Datasheet

 
Part No. BC856S Q62702-C2532 Q62702G0077
Description GaAs MMIC (Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package)
From old datasheet system
PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

File Size 41.38K  /  6 Page  

Maker

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
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Part: BC856S
Maker: INFINEON
Pack: SOT-36..
Stock: Reserved
Unit price for :
    50: $0.06
  100: $0.06
1000: $0.05

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 Full text search : GaAs MMIC (Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package) From old datasheet system PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
 Product Description search : GaAs MMIC (Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package) From old datasheet system PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)


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