| PART |
Description |
Maker |
| 3BH41 3GH41 EE08669 |
Silicon diffused type fast recovery diode for high speed rectifier applications FAST RECOVERY DIODE (HIGH SPEED RECTIFIER APPLICATIONS) From old datasheet system HIGH SPEED RECTIFIER APPLICATION (FAST RECOVERY)
|
TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
|
| CMDD4448 |
SUPERminiTM HIGH SPEED SWITCHING DIODE 0.25 A, 100 V, SILICON, SIGNAL DIODE
|
Central Semiconductor, Corp. Central Semiconductor Corp. CENTRAL[Central Semiconductor Corp]
|
| BAS16W |
High Speed Switching Diode 350mW 0.1 A, 75 V, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp. Micro Commercial Components Corp.
|
| BAS678 |
High-speed diode 0.3 A, 100 V, SILICON, SIGNAL DIODE
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
| BAS40-07W BAS4007W |
Silicon Schottky Diode Preliminary data (General-purpose diode for high-speed switching Circuit protection Voltage clamping) 2 ELEMENT, SILICON, SIGNAL DIODE From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
| BAS16W-TP |
DIODE SWITCH 75V 200MA SOD123 0.1 A, 75 V, SILICON, SIGNAL DIODE High Speed Switching Diode 350mW
|
Micro Commercial Components, Corp. Micro Commercial Compon...
|
| 1SS199 1SS199MHD |
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching 硅肖特基二极管各种探测器,高速开 Silicon Schottky Barrier Diode for Various Detector High Speed Switching Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching
|
Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
|
| 1SS311 |
Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching Applications
|
TOSHIBA
|
| NTE2558 |
Silicon NPN Transistor Darlington, High Voltage, High Speed Switch w/ Damper Diode
|
NTE[NTE Electronics]
|
| 1SS399 |
DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|