| PART |
Description |
Maker |
| APT50GP60S |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT50GP60J |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT50GP60B2DF2 |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT26GU30B |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT40GP60B APT40GP60S |
POWER MOS 7 IGBT
MOSFET
|
Advanced Power Technolo...
Advanced Power Technology
|
| APT15GP60BDF1 |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology Ltd.
|
| APT45GP120B2DQ2 APT45GP120B2DQ2G |
113 A, 1200 V, N-CHANNEL IGBT
POWER MOS 7 IGBT
|
MICROSEMI POWER PRODUCTS GROUP
Advanced Power Technology
|
| APT45GP120JDQ2 |
75 A, 1200 V, N-CHANNEL IGBT
POWER MOS 7 IGBT
|
MICROSEMI POWER PRODUCTS GROUP
Advanced Power Technology
|
| APT50M60L2VR_04 APT50M60L2VR APT50M60L2VR04 |
77 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS V㈢ MOSFET
POWER MOS V? MOSFET
|
MICROSEMI[Microsemi Corporation]
|
| 2SK2983 D12357EJ1V0DS00 2SK2983-ZJ 2SK2983-S 2SK29 |
Low voltage 4V drive power MOSFET
MOS Field Effect Transistor
From old datasheet system
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| IRFBL10N60A |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞????
HEXFET Power MOSFET
HEXFET? Power MOSFET
11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
|
IRF[International Rectifier]
VISHAY SILICONIX
|
| APT65GP60JDQ2 |
POWER MOS 7 IGBT
|
http://
Advanced Power Technology
|
