| PART |
Description |
Maker |
| HYB39S256800T-8B HYB39S256400T-8B HYB39S256800T-10 |
256 MBit Synchronous DRAM 32M X 8 SYNCHRONOUS DRAM, 7 ns, PDSO54
256 MBit Synchronous DRAM 32M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
|
Siemens Semiconductor Group
SIEMENS AG
|
| TCS59SM716AFTL-80 TCS59SM716AFTL-70 TCS59SM716AFTL |
2M×4Banks×16Bits Synchronous DRAM(4M×16位同步动态RAM)
8M×4Banks×4Bits Synchronous DRAM(4M×4位同步动态RAM)
4M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 4米4Banks × 8位同步DRAM米8位同步动态RAM）的
8M?4Banks?4Bits Synchronous DRAM(4缁?M?4浣??姝ュ???AM)
SYNCHRONOUS DRAM, PDSO54
|
Toshiba Corporation
Toshiba, Corp.
|
| HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出（EDO)动态RAM)
|
http://
SIEMENS AG
|
| IS42S16160B-6T IS42S83200B-6T IS42S16160B-6TL IS42 |
256-MBIT SYNCHRONOUS DRAM
|
天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc
Integrated Silicon Solution...
|
| IS45S16160C-7TLA1 IS45S16160C-75TLA1 IS45S83200C |
256 Mb Single Data Rate Synchronous DRAM
|
Integrated Silicon Solution, Inc
|
| IS42S16160B IS42S16160B-6T IS42S16160B-7BL IS42S16 |
32MEG X 8, 16MEG X16 256-MBIT SYNCHRONOUS DRAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| HYE25L256160AC-7.5 HYE25L256160AF-7.5 HYB25L256160 |
256-MBit Mobile-RAM
16M X 16 SYNCHRONOUS DRAM, 7.5 ns, PBGA54 12 X 8 MM, GREEN, PLASTIC, TFBGA-54
16M X 16 SYNCHRONOUS DRAM, 7.5 ns, PBGA54 12 X 8 MM, PLASTIC, TFBGA-54
|
Qimonda AG
|
| NM93C06EM8 NM93C06EMT8 NM93C06EN NM93CS06EMT8 NM93 |
256-Bit Serial CMOS EEPROM (MICROWIRE?/a> Synchronous Bus)
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 16 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8
Card Edge Connector; No. of Contacts:40; Pitch Spacing:0.1" RoHS Compliant: Yes
256-Bit Serial CMOS EEPROM (MICROWIRE⑩ Synchronous Bus)
256-BIT SERIAL CMOS EEPROM (MICROWIRE⒙ SYNCHRONOUS BUS)
256-Bit Serial CMOS EEPROM (MICROWIRE Synchronous Bus)
256-Bit Serial CMOS EEPROM (MICROWIRE?Synchronous Bus)
|
Fairchild Semiconductor, Corp.
EEPROM
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| AM29F002T-90JCB AM29F002T-55EI AM29F002T-55JC AM29 |
FLASH 5V PROM, PDSO32
FLASH 5V PROM, PDIP32
High Speed CMOS Logic Inverting Octal Buffer/Line Drivers with 3-State Outputs 20-CDIP -55 to 125 2兆位56亩8位）的CMOS 5.0伏，只引导扇区闪
2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 8 FLASH 5V PROM, 120 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 2兆位256亩8位）的CMOS 5.0伏，只引导扇区闪
2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 8 FLASH 5V PROM, 55 ns, PDIP32
High Speed CMOS Logic Octal D-Type Flip-Flops with Reset 20-CDIP -55 to 125 256K X 8 FLASH 5V PROM, 55 ns, PQCC32
High Speed CMOS Logic Triple 3-Input NOR Gates 14-CDIP -55 to 125 256K X 8 FLASH 5V PROM, 55 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 2兆位56亩8位）的CMOS 5.0伏，只引导扇区闪
2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 8 FLASH 5V PROM, 55 ns, PDSO32
CAP, 180UF, 2V, 20%, 7343-28
High Speed CMOS Logic Non-Inverting Quad 2-Input Multiplexer with 3-State Outputs 16-CDIP -55 to 125
High Speed CMOS Logic Non-Inverting Octal Buffer/Line Drivers with 3-State Outputs 20-CDIP -55 to 125
MB 12C 8#20 4#16 PIN RECP
High Speed CMOS Logic Non-Inverting Octal-Bus Transceiver with 3-State Outputs 20-CDIP -55 to 125
CAP,22uF,12.5VDC,20-% Tol,20 % Tol RoHS Compliant: Yes
High Speed CMOS Logic 8-Bit Addressable Latch 16-CDIP -55 to 125
Am29F002/F002N - 2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
LM3075 High Efficiency, Synchronous Current Mode Buck Controller; Package: TSSOP; No of Pins: 20; Qty per Container: 73; Container: Rail
2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
|
ADVANCED MICRO DEVICES INC
SPANSION LLC
http://
Advanced Micro Devices, Inc.
ATMEL Corporation
|
| MT48LC8M16LFTG-75ITG MT48LC8M16LFF4-75ITG MT48LC4M |
8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 8 X 8 MM, VFBGA-54
4M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 8 X 13 MM, VFBGA-90
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Qimonda AG
SMSC, Corp.
|
|
