| PART |
Description |
Maker |
| HM50256 HM50256ZP HM50256P |
262144 X 1-Bit DRAM
|
Hitachi
|
| M5M5V208FP-10L M5M5V208FP-10LL M5M5V208FP-12L M5M5 |
From old datasheet system
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word8位）的CMOS静态RAM
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静态RAM
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静RAM
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| MSM5416262 |
262144-Word x 16-Bit Multiport DRAM
262,144-Word x 16-Bit Multiport DRAM
|
OKI[OKI electronic componets]
|
| M5M5256CP-10LL M5M5256CP-10XL M5M5256CP-85LL M5M52 |
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位（32768 - Word8位）的CMOS静态RAM
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位（32768 - Word位）的CMOS静态RAM
262144-bit (32768 x 8-bit) CMOS static RAM, 85ns
262144-bit (32768 x 8-bit) CMOS static RAM, 100ns
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| HYM72V4045GU-60 HYM72V4045GU-50 HYM64V4045GU-60 HY |
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
4M x 72 Bit ECC DRAM Module unbuffered
4M x 64 Bit DRAM Module unbuffered
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 50 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 3.3 4米64位江户内.3分72位江户记忆体模组
GIGASTATION2 SNAP FITTINGF CONN, IVORY 4M X 64 EDO DRAM MODULE, 60 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 60 ns, DMA168
|
Siemens Semiconductor G...
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| HN27C4000G-10 HN27C4000G HN27C4000G-15 |
524288-Word 8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM 524288词？8-Bit/262144-Word x 16位的CMOS紫外线可擦除只读存储
524288-Word ?8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| HYS72V2200GU-10 HYS72V2200GU-8 HYS64V2200GU-10 HYS |
Network Cable Assembly; Connector Type A:T568A/B Modular Plug; Connector Type B:T568A/B Modular Plug; Cable Length:7ft; Approval Categories:Augmented Category 6 standards; cord color per TIA/EIA-606 standard RoHS Compliant: Yes
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 4M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 2M X 72 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 2M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
KPT 3C 3#20 SKT PLUG 3.3 2米x 64/72-Bit一银行内存模块3.3 4米64/72-Bit 2银行内存模块
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 4M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 2M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 4M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
SIEMENS A G
|
| M5M5W416CWG-85HI |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| M5M5Y416CWG-85HI |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M44258-7 |
STATIC COLUMN MODE 1048576-BIT (262144-WORD BY 4-BIT) DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
| M5M5T5672TG-22 M5M5T5672TG-25 |
18874368-BIT(262144-WORD BY 72-BIT) NETWORK SRAM
|
Renesas Electronics Corporation
|
| HYB5118165BST-60 HYB5118165BST-50 HYB5118165BSJ-60 |
1M x 16 Bit 1k 5 V 60 ns EDO DRAM
1M x 16 Bit 1k 3.3 V 60 ns EDO DRAM
1M x 16 Bit 1k 5 V 50 ns EDO DRAM
-1M x 16-Bit Dynamic RAM 1k Refresh
1M x 16 Bit 1k 3.3 V 50 ns EDO DRAM
1M x 16-Bit Dynamic RAM 1k Refresh (Hyper Page Mode-EDO)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
