| PART |
Description |
Maker |
| 2SB631 2SB631K 2SD600 2SD600K |
NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications
100V/120V/ 1A Low-Frequency Power Amplifier Applications
100V/120V/ 1A Low-Frequency Power Amp Applications
PNP/NPN Epitaxial Planar Silicon Transistors
100V/120V, 1A Low-Frequency Power Amp Applications
PNP Epitaxial Planar Silicon Transistor for 100V/120V, 1A Low-Frequency Power Amplifier Applications(用于100V/120VA低频功率放大器应用的PNP硅外延平面型晶体
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| KSC2710 |
NPN (LOW FREQUENCY POWER AMPLIFIER)
|
SAMSUNG[Samsung semiconductor]
|
| KSC2859 |
NPN (LOW FREQUENCY POWER AMPLIFIER)
|
SAMSUNG[Samsung semiconductor]
|
| 2SD389 |
LOW FREQUENCY POWER AMPLIFIER(NPN)
|
WS
WINGS[Wing Shing Computer Components]
|
| KSD2012 KSD2012GTU |
LOW FREQUENCY POWER AMPLIFIER 3 A, 60 V, NPN, Si, POWER TRANSISTOR
NPN Epitaxial Silicon Transistor
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| 310-024103-022 024103-022 |
Filtered Low Noise Ampli er
|
API Technologies Corp
Spectrum Microwave, Inc.
|
| 310-025103-011 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 310-024105-021 024105-021 |
Filtered Low Noise Ampli er
|
API Technologies Corp
Spectrum Microwave, Inc.
|
| 310-024107-021 024107-021 |
Filtered Low Noise Ampli er
|
API Technologies Corp
Spectrum Microwave, Inc.
|
| 2SC3422 E000844 |
NPN EPITAXIAL TYPE (AUDIO FREQUENCY POWER AMPLIFIER/ LOW SPEED SWITCHING)
NPN EPITAXIAL TYPE (AUDIO FREQUENCY POWER AMPLIFIER, LOW SPEED SWITCHING)
From old datasheet system
|
Toshiba Semiconductor
|
| 2SD2403 2SD2403GZ 2SD2403-GX-AZ |
NPN epitaxial type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-243 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）|43
3 A, 60 V, NPN, Si, POWER TRANSISTOR
|
NEC[NEC]
NEC, Corp.
NEC Corp.
|
