| PART |
Description |
Maker |
| GS74104J-12 GS74104J-10 GS74104J-10I GS74104J-12I |
10ns 1M x 4 4Mb asynchronous SRAM
8ns 1M x 4 4Mb asynchronous SRAM
12ns 1M x 4 4Mb asynchronous SRAM
|
http://
GSI Technology
|
| M29DW324DB70ZA6 M29DW324DB70ZA6F M29DW324DB70ZE6F |
CABLE ASSEMBLY; LEAD-FREE SOLDER; N MALE TO N FEMALE; 50 OHM, RG225/U COAX, DOUBLE SHIELDED
32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽，双66分，启动V电源快闪记忆
32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽，双66分，启动3V电源快闪记忆
32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽，双1616分，启动V电源快闪记忆
32 Mbit 4Mb x8 or 2Mb x16 / Dual Bank 16:16 / Boot Block 3V Supply Flash Memory
|
SGS Thomson Microelectronics
意法半导
STMicroelectronics N.V.
ST Microelectronics
|
| GS840FH18AGT-8 GS840FH18AT-8.5 GS840FH18AT-8.5I GS |
4Mb Burst SRAMs
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| M27C320 6185 M27C320-80N1 M27C320-100M1 M27C320-10 |
From old datasheet system
32 Mbit (4Mb x8 or 2Mb x16) OTP EPROM
32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM 32兆位4Mb的x8或检察官办公室的2Mb x16存储
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| HSDL-3602-007 HSDL-3602-008 HSDL-3602-037 HSDL-360 |
HSDL-3602-007 · IrDA 1.1 Data Compliant 4Mb/s 3V Infrared Transceiver
HSDL-3602-008 · IrDA 1.1 Data Compliant 4Mb/s 3V Infrared Transceiver
HSDL-3602-037 · IrDA 1.1 Data Compliant 4Mb/s 3V Infrared Transceiver
HSDL-3602-038 · IrDA 1.1 Data Compliant 4Mb/s 3V Infrared Transceiver
|
Agilent (Hewlett-Packard)
|
| M29F032D M29F032D70 7946 M29F032D70N1 M29F032D70N1 |
32 MBIT (4MB X8, UNIFORM BLOCK) 5V SUPPLY FLASH MEMORY
32 Mbit 4Mb x8 / Uniform Block 5V Supply Flash Memory
32 MBIT (4MB X8, UNIFORM BLOCK) 5V SUPPLY FLASH MEMORY
32 Mbit 4Mb x8 Uniform Block 5V Supply Flash Memory
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| GS74108AGX-12I GS74108AJ-12I GS74108AJ-10I GS74108 |
512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 12 ns, PDSO36
512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 10 ns, PDSO36
512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 12 ns, PDSO44
512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 10 ns, PBGA48
512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 8 ns, PDSO44
512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 8 ns, PDSO36
|
SRAM
GSI Technology, Inc.
|
| ID244E01 |
4MB Flash Memory Card
|
SHARP[Sharp Electrionic Components]
|
| ID245E01 |
4MB Flash Memory Card
|
SHARP[Sharp Electrionic Components]
|
| CG6257AM |
4Mb (256K x 16) Pseudo Static RAM
|
WEIDA[Weida Semiconductor, Inc.]
|
| M29W320EB70N1 M29W320EB70N1E M29W320EB90N6T M29W32 |
32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory
32 Mbit (4Mb x8 or 2Mb x16, Boot Block) 3V Supply Flash Memory 32兆位Mb的x8或功能的2Mb x16插槽，引导块V电源快闪记忆
|
STMicroelectronics N.V.
ST Microelectronics
|
