| PART |
Description |
Maker |
| GN1022 |
GaAs N Channel MES Type IC
|
Matsushita Electric Works(Nais)
Panasonic Semiconductor
|
| GN2011 |
GaAs N-Channel MES IC
|
Panasonic
|
| 3SK241 |
GaAs N-Channel MES FET
|
Panasonic Semiconductor
|
| NE6501077 |
10 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
10 W L S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC[NEC]
ETC
|
| SGM2016AP SGM2016AM SGM2016AM_AP |
GaAs N-channel Dual-Gate MES FET
From old datasheet system
|
Sony
|
| SGM2016AN |
GaAs N-channel Dual-Gate MES FET
From old datasheet system
|
Sony
|
| NE76118-T2 NE76118-T1 NE76118 |
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
|
NEC Corp.
NEC[NEC]
|
| NE76084 NE76084-SL NE76084-T1 NE76084-T1A |
C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET C到Ku波段低噪声放大器N沟道砷化镓场效应晶体
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NE650R479A NE650R479A-T1 |
0.4 W L, S-BAND POWER GaAs MES FET 0.4册，S波段功率GaAs场效应晶体管
0.4 W L / S-BAND POWER GaAs MES FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NE713 NE71300-L NE71300-N NECCORP.-NE713 |
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
L降至Ku波段低噪声放大器N沟道砷化镓场效应晶体
|
NEC Corp.
|
