| PART |
Description |
Maker |
| 2SA1807 A5800342 2SA1807TLN 2SA1862TLP 2SA1807TLP |
High-Voltage Switching Transistor (Telephone, Power Supply) (-600V, -1A)
High-Voltage Switching Transistor (Telephone power supply) (-600V, -1A)
From old datasheet system
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 2A I(C) | TO-252VAR
TRANSISTOR | BJT | PNP | 600V V(BR)CEO | 1A I(C) | TO-252VAR 晶体管|晶体管|进步党| 600V的五（巴西）总裁| 1A条一（c）|52VAR
|
ROHM[Rohm]
Rohm Co., Ltd.
|
| UT4N60F |
N-Ch 600V Fast Switching MOSFETs
|
ShenZhen XinDeYi Electronics Co., Ltd.
|
| 1N4723-1 |
Diode Switching 600V 3A 2-Pin TOP HAT
|
New Jersey Semiconductor
|
| IGW50N60H3-14 |
600V high speed switching series third generation
|
Infineon Technologies A...
|
| MUR1660CT |
Diode Switching 600V 8A 3-Pin(3 Tab) TO-220AB
|
New Jersey Semiconductors
|
| RJK6034DPP-E0T2 RJK6034DPP-E0-15 |
600V - 1A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK60S2DPP-E0 RJK60S2DPP-E0-T2 |
600V - 8A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJH60F7BDPQ-A0 |
600V - 50A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6011DJA-15 |
600V - 0.1A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJP60F5DPK-15 |
600V - 40A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| STGW40NC60WD GW40NC60WD |
N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| RJK6018DPM-00T1 |
600V - 30A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
