PART |
Description |
Maker |
HY6116 HY6116-15 |
2048 x 8 Bit CMOS Static RAM x8 SRAM
|
Hynix Semiconductor
|
LC3517B |
2048-word x 8 bit CMOS Static RAM
|
Sanyo Semiconductor
|
SAE81C52 SAE81C52G SAE81C52P |
From old datasheet system 256 x 8-Bit Static CMOS RAM NMOS-Compatible
|
Siemens Semiconductor Group
|
UPD4265400G5-A50 UPD4265400G5-A60 UPD4265400G5-A70 |
2M x 8 Static RAM 256K x 4 Static RAM x4快速页面模式的DRAM 512K x 32 Static RAM x4快速页面模式的DRAM 3.3V 16K/32K x 36 FLEx36™ Synchronous Dual-Port Static RAM x4快速页面模式的DRAM x4 Fast Page Mode DRAM x4快速页面模式的DRAM 512K x 24 Static RAM x4快速页面模式的DRAM 2-Mbit (128K x 16) Static RAM x4快速页面模式的DRAM 128K x 8 Static RAM 128K的8静态RAM x4FastPageModeDRAM
|
Elpida Memory, Inc. EPCOS AG STMicroelectronics N.V. NEC, Corp.
|
KM68257C-12 KM68257CJ-12 KM68257CJ-20 KM68257CL-12 |
32Kx8 bit high speed static RAM (5V operating), 20ns 32Kx8 bit high speed static RAM (5V operating), 15ns 32Kx8 bit high speed static RAM (5V operating), 12ns 32Kx8 Bit High Speed Static RAM(5V Operating(, Evolutionary Pin out. Operated at Commercial Temperature Range. 32Kx8位高速静态RAM5V的工作(,进化引脚了。在商业温度范围工作
|
Samsung Electronic SAMSUNG[Samsung semiconductor] Samsung Semiconductor Co., Ltd.
|
IDT71V416YS15YGI IDT71V416YS IDT71V416YL10BEG IDT7 |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V的CMOS静态RAM 4梅格56K x 16位) 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
IDT[Integrated Device Technology] Integrated Device Technology, Inc.
|
NTE2102 |
Integrated Circuit NMOS, 1K Static RAM (SRAM), 350ns Integrated Circuit NMOS / 1K Static RAM (SRAM) / 350ns
|
NTE[NTE Electronics]
|
KM684000 KIM684000L-8L KIM684000-10 KIM684000-5 KI |
512Kx8 bit CMOS static RAM, 85ns, low power 512Kx8 bit CMOS static RAM, 100ns, low power 524/ 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM PT 16C 16#16 PIN PLUG 524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 52488字8位高速CMOS静态RAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32 128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM 128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM 55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM 55ns; 128 x 8-bit low power CMOS static RAM 70ns; 128 x 8-bit low power CMOS static RAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
|
UPD431000AGU-70LL-9JH UPD431000AGU-70LL-9KH UPD431 |
1M-bit (128K-word by 8-bit) CMOS static RAM, 70ns 1M-bit (128K-word by 8-bit) CMOS static RAM, 100ns 1M-bit (128K-word by 8-bit) CMOS static RAM, 120ns 1M-bit (128K-word by 8-bit) CMOS static RAM, 150ns
|
NEC
|
STK12C68-5KF35 STK12C68-5KF35I STK12C68-5KF35M STK |
8K x 8 AutoStore?/a> nvSRAM QuantumTrap?/a> CMOS Nonvolatile Static RAM 8K x 8 AutoStore垄芒 nvSRAM QuantumTrap垄芒 CMOS Nonvolatile Static RAM 8K x 8 AutoStore nvSRAM QuantumTrap CMOS Nonvolatile Static RAM 8K X 8 AUTOSTORE⒙ NVSRAM QUANTUMTRAP⒙ CMOS NONVOLATILE STATIC RAM 8K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS Nonvolatile Static RAM CAP 470PF 500V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR 8K x 8 AutoStorenvSRAM QuantumTrapCMOS Nonvolatile Static RAM 8K的8自动存储非易失QuantumTrap⑩⑩的CMOS非易失性静态随机存储器 8K x 8 AutoStore??nvSRAM QuantumTrap??CMOS Nonvolatile Static RAM 8K X 8 NON-VOLATILE SRAM, 25 ns, PDIP28 8K X 8 NON-VOLATILE SRAM, 55 ns, PDSO28 8K X 8 NON-VOLATILE SRAM, 45 ns, CDIP28
|
SIMTEK List of Unclassifed Manufacturers ETC[ETC] Electronic Theatre Controls, Inc. CYPRESS SEMICONDUCTOR CORP
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