| PART |
Description |
Maker |
| MG1200V1US51 |
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
TOSHIBA GTR MODULE SILICON N-CHANNEL IGBT
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| MG200J6ES60 |
TOSHIBA GTR Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| MG150J7KS50 |
TOSHIBA GTR Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| MG50Q2YS91 |
GTR Module Silicon N-Channel IGBT
|
Toshiba
|
| MG300J2YS50 E002237 |
TOSHIBA GTR MODULE SILICON N CHANNEL 1GBT
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
From old datasheet system
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
|
Toshiba Semiconductor
|
| MG400J1US51 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
| MG1200FXF1US51 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
| MG100J6ES50 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
| MG150Q2YS51 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
| MG200J2YS50 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
| MG75Q1ZS50 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
